Effect of substrate temperature and oxygen partial pressure on structural and optical properties of Mg doped ZnO thin films

2015 ◽  
Vol 41 (5) ◽  
pp. 6269-6273 ◽  
Author(s):  
Vanita Devi ◽  
Manish Kumar ◽  
Ravindra Kumar ◽  
B.C. Joshi
2012 ◽  
Vol 626 ◽  
pp. 25-28 ◽  
Author(s):  
A. Ismail ◽  
Mat Johar Abdullah

AlN doped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. For AlN doped ZnO at RF powers of 200 W (ZnO target) and 200W (AlN target), the ZnO (002) peak showed the highest intensity at the substrate temperature of 400˚ C. The prepared films showed good transmission of above 72 % in the visible range. The calculated values of energy band gaps were in the range (3.42 eV - 3.54 eV) for the films prepared at different substrate temperatures.


2016 ◽  
Vol 8 (4(2)) ◽  
pp. 04053-1-04053-4 ◽  
Author(s):  
A. Sh. Asvarov ◽  
◽  
S. Sh. Makhmudov ◽  
A. Kh. Abduev ◽  
A. K. Akhmedov ◽  
...  

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