Picoliter volume glass tube array fabricated by Si electrochemical etching process

2005 ◽  
Vol 51 (5) ◽  
pp. 844-848 ◽  
Author(s):  
Hirotaka Sato ◽  
Takayuki Homma ◽  
Kentaro Mori ◽  
Tetsuya Osaka ◽  
Shuichi Shoji
Keyword(s):  
Electrochemical Etching ◽  
Glass Tube ◽  
Etching Process

Well-controlled preparation of evenly distributed nanoporous HOPG surface via diazonium salt assisted electrochemical etching process

Carbon ◽  
2016 ◽  
Vol 102 ◽  
pp. 419-425 ◽  
Author(s):  
Liang Cui ◽  
Yuanhong Xu ◽  
Bingping Liu ◽  
Wenrong Yang ◽  
Zhongqian Song ◽  
...  
Keyword(s):  
Electrochemical Etching ◽  
Diazonium Salt ◽  
Etching Process ◽  
Controlled Preparation

scholarly journals Fabrication of (ZnO)x: (Cu)1-x/PSi Solar Cell Using Laser Induced Plasma Technique

2021 ◽  
Vol 2114 (1) ◽  
pp. 012028
Author(s):  
G. H. Jihad ◽  
K.A. Aadim
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Current Density ◽  
Electrochemical Etching ◽  
Average Diameter ◽  
Etching Process ◽  
Morphological Properties ◽  
Etching Time ◽  
Solar Cell Performance ◽  
Cell Efficiency

Abstract Fabrication of PSi is generated successfully depending upon photo-electrochemical etching process. The purpose is to differentiate the characterization of the PSi monolayer based on c-silicon solar cell compared to the bulk silicon alone. The surface of ordinary p-n solar cell has been reconstructed on the n-type region of (100) orientation with resistivity (3.2.cm) in hydrofluoric (HF) acid at a concentration of 2 ml was used to in order to enhance the conversion efficiency with 10-minute etching time and current density of 50 mA/cm2, The morphological properties (AFM) as well as the electrical properties have been investigated (J-V). The atomic force microscopy investigation reveals a rugged silicon surface with porous structure nucleating during the etching process (etching time), resulting in an expansion in depth and an average diameter of (40.1 nm). As a result, the surface roughness increases. The electrical properties of prepared PS, namely current density-voltage characteristics in the dark, reveal that porous silicon has a sponge-like structure and that the pore diameter increases with increasing etching current density and the number of shots increasing this led that the solar cell efficiency was in the range of (1-2%), resulting in improved solar cell performance.

Achieving Superior Electrocatalytic Performance by Surface Copper Vacancy Defects during Electrochemical Etching Process

2020 ◽  
Vol 59 (33) ◽  
pp. 13778-13784 ◽  
Author(s):  
Niankun Guo ◽  
Hui Xue ◽  
Amurisana Bao ◽  
Zihong Wang ◽  
Jing Sun ◽  
...  
Keyword(s):  
Electrochemical Etching ◽  
Etching Process ◽  
Vacancy Defects ◽  
Electrocatalytic Performance

Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

1999 ◽  
Vol 572 ◽  
Author(s):  
Won Sang Lee ◽  
Yoon Ho Choi ◽  
Ki Woong Chung ◽  
Moo Whan Shin ◽  
Dong Chan Moon
Keyword(s):  
Electrochemical Etching ◽  
Etching Rate ◽  
Drain Current ◽  
Etching Process ◽  
Device Performance ◽  
High Activation ◽  
Band Bending ◽  
Photoelectrochemical Etching ◽  
Characteristic Frequencies ◽  
Recessed Gate

ABSTRACTA new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 Å/min under the Hg illumination of 35 mW/cm/2. The MESFET saturates at VDS = 4 V and pinches off at VGS = −3 V. The maximum drain current of the device is 230 mA/mmn at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

Lift -Off Process to get Free-Standing High Quality Single Crystal Diamond Films and Suspended Single Crystal Diamond Devices

2006 ◽  
Vol 956 ◽  
Author(s):  
Jie Yang ◽  
C. F. Wang ◽  
E. L. Hu ◽  
James E. Butler
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Light Transmission ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Critical Parameters ◽  
Transmission Microscopy ◽  
Single Crystal Diamond ◽  
Cvd Growth ◽  
Lift Off

ABSTRACTFreestanding and suspended single crystal diamond devices, micro disks and beam structures, have been fabricated on single crystal diamond substrates using a lift-off process employing ion implantation followed by electrochemical etching. The ion implantation created subsurface damage in the diamond while the top surface was sufficiently undamaged that a subsequent homo-epitaxial diamond layer could be grown by chemical vapor deposition (CVD). After the CVD growth and patterning by lithography and reactive ion etching, the underlying damage layer was etched/removed by an electrochemical etch. Different implant ions and energies were simulated and tested to optimize the process. The electrochemical etching process was monitored by an optical video technique. The electrochemical etching process used both ac and dc applied electrical potentials. Photoluminescence (PL), Raman spectra, and polarized light transmission microscopy have been used to characterize the implanted substrate and lift-off films. AFM has been used to monitor the surface changes after mechanical polishing, ion implantation, CVD growth and the lift-off process. This research has revealed that the parameters of ion implantation (implant species, dose and energy) dramatically affect the lift-off process. The etching mechanism and critical parameters are discussed in this work. PL spectroscopy indicated differences between the uppermost layers of the homo-epitaxial film and the lift-off interface. Three principal classes of defects have been observed: growth defects inherent in the diamond substrates (type Ib, HPHT), defects induced by the polishing process and associated stress, and point defects.

scholarly journals PHOTOSENSITIVE MATRIX BASED ON POROUS MICROCRYSTALLINE SILICON

2017 ◽  
Vol 17 (5) ◽  
pp. 115-121
Author(s):  
N.V. Latukhina ◽  
D.A. Pisarenko ◽  
A.V. Volkov ◽  
V.A. Kitaeva
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Microcrystalline Silicon ◽  
Artificial Retina ◽  
Experimental Researches ◽  
Water Alcohol Solutions ◽  
Water Alcohol

The article presents the results of experimental researches of optoelectric properties of porous silicon. Layers of porous silicon were formed using electrochemical etching process in water-alcohol solutions of hydrofluoric acid on plates with a pre-established microrelief surface. Evaluation of possibility of using of created structure as the artificial retina component was performed based on the results of the research.

Research on the synergistic effect of megasonic and particles in through mask electrochemical etching process

2020 ◽  
Vol 364 ◽  
pp. 137300
Author(s):  
Ke Zhai ◽  
Liqun Du ◽  
Shuxuan Wang ◽  
Yikui Wen ◽  
Junshan Liu
Keyword(s):  
Synergistic Effect ◽  
Electrochemical Etching ◽  
Etching Process

Achieving Superior Electrocatalytic Performance by Surface Copper Vacancy Defects during Electrochemical Etching Process

2020 ◽  
Vol 132 (33) ◽  
pp. 13882-13888 ◽  
Author(s):  
Niankun Guo ◽  
Hui Xue ◽  
Amurisana Bao ◽  
Zihong Wang ◽  
Jing Sun ◽  
...  
Keyword(s):  
Electrochemical Etching ◽  
Etching Process ◽  
Vacancy Defects ◽  
Electrocatalytic Performance

Optimization of platinum adhesion in electrochemical etching process for multi-sensor systems

2007 ◽  
Vol 127 (1) ◽  
pp. 126-131 ◽  
Author(s):  
J KRITWATTANAKHORN ◽  
M BAUERSFELD ◽  
A KOVACS ◽  
B MULLER ◽  
U MESCHEDER ◽  
...  
Keyword(s):  
Electrochemical Etching ◽  
Etching Process ◽  
Sensor Systems
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