Study of ytterbium doping effects on structural, mechanical and opto-thermal properties of sprayed ZnO thin films using the Boubaker Polynomials Expansion Scheme (BPES)

2009 ◽  
Vol 485 (1-2) ◽  
pp. 887-891 ◽  
Author(s):  
A. Amlouk ◽  
K. Boubaker ◽  
M. Amlouk ◽  
M. Bouhafs
Keyword(s):  
Thin Films ◽  
Thermal Properties ◽  
Zno Thin Films ◽  
Doping Effects ◽  
Boubaker Polynomials ◽  
Ytterbium Doping ◽  
Expansion Scheme

A Boubaker polynomials expansion scheme (BPES)-related protocol for measuring sprayed thin films thermal characteristics

2009 ◽  
Vol 9 (5) ◽  
pp. 1129-1133 ◽  
Author(s):  
S. Lazzez ◽  
K.B. Ben Mahmoud ◽  
S. Abroug ◽  
F. Saadallah ◽  
M. Amlouk
Keyword(s):  
Thin Films ◽  
Thermal Characteristics ◽  
Boubaker Polynomials ◽  
Expansion Scheme

Effect of Sintering Atmosphere on the Electrical and Thermal Properties of Al-Doped ZnO Thin Films Prepared Using Inkjet Printing Method

2015 ◽  
Vol 793 ◽  
pp. 440-444
Author(s):  
J.H. Lim ◽  
Cheow Keat Yeoh ◽  
Chik Abdullah ◽  
Pei Leng Teh
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Thermal Properties ◽  
Inkjet Printing ◽  
Zno Thin Films ◽  
Al Doping ◽  
Sintering Atmosphere ◽  
Ink Jet ◽  
Jet Printing ◽  
Doped Zno

Al-doped ZnO thin films were prepared by ink-jet printing and their electrical and thermal properties with different amounts of Al doping and sintering atmosphere were investigated. The XRD traces of films show the doped materials did not form additional crystalline phases with increasing amounts of Al doping. Electrical conductivity of film increased from 4.86 S/cm to 120.94 S/cm as the amounts of Al doping increased from 0 wt% to 4 wt%. However, the thermal conductivity decreased from 24 W/mK to 13 W/mK with increasing the Al doping from 0 wt% to 4 wt%. The electrical conductivity of film shows higher values sintered in vacuum (120.94 S/cm) compared to film sintered in air (114.1 S/cm).

Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition.

2004 ◽  
Vol 829 ◽  
Author(s):  
S. P. Heluani ◽  
G. Simonelli ◽  
M. Villafuerte ◽  
G. Juarez ◽  
A. Tirpak ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Axis Orientation ◽  
Si Substrates ◽  
N2 Atmosphere ◽  
Doping Effects ◽  
High O2

ABSTRACTStructural and electronic transport properties of polycrystalline ZnO thin films, prepared by pulsed laser deposition, have been investigated. The films were deposited on glass and Si3N4/Si substrates using O2 and N2 atmospheres. X-ray analysis revealed preferential c-axis orientation perpendicular to the sample substrate. Films deposited under relatively high O2 pressure were highly resistive. However, the conductivity σ increased while the films were irradiated with ultraviolet light, showing an Arrhenius (In σ ∝ T-1) dependence as a function of temperature. The ZnO film deposited in N2 atmosphere exhibited at room temperature a resistivity ∼ 1 Ω cm, and a sheet carrier concentration ∼ 5 1012 cm-2. The variation of the conductivity with temperature, in the range 60 – 150 K, follows a In σ ∝ T-1/4 dependence characteristic of variable range hopping. An analysis of the experimental results of conductivity as a function of temperature, in terms of possible doping effects, as well as conduction mechanisms is presented.

Doping effects on electrical and optical properties of spin-coated ZnO thin films

Vacuum ◽  
2015 ◽  
Vol 114 ◽  
pp. 198-204 ◽  
Author(s):  
N.A. Vorobyeva ◽  
M.N. Rumyantseva ◽  
R.B. Vasiliev ◽  
V.F. Kozlovskiy ◽  
Yu.M. Soshnikova ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Doping Effects
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