Low temperature sintering kinetics of BaZn 2 Ti 4 O 11 dielectric ceramic in the presence of a liquid phase

Al8B4C7 was used as a sintering additive for the densification of nano-SiC powder. The average grain size was approximately 70 nm after sintering SiC-12.5wt% Al8B4C7 at 1550 °C. The densification rate strongly depended on the sintering temperature and the applied pressure. The rearrangement of SiC particles occurred at the initial shrinkage, while viscous flow and liquid phase sintering became important at the middle and final stage of densification.

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Studies on Structural, Microwave Dielectric Properties, and Low-Temperature Sintering of 1.52Li2O-0.36Nb2O5-1.34TiO2 Ceramic

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.512-515.1226 ◽

2012 ◽

Vol 512-515 ◽

pp. 1226-1230

Author(s):

Qun Zeng ◽

Yong Heng Zhou

Keyword(s):

Dielectric Properties ◽

Low Temperature ◽

Sintering Temperature ◽

Microwave Dielectric Properties ◽

Microwave Dielectric Ceramic ◽

Low Temperature Sintering ◽

Dielectric Ceramic ◽

Microwave Dielectric ◽

M Phase ◽

Two Phases

The structure, microwave dielectric properties and low-temperature sintering of a new Li2O-Nb2O5-TiO2 system ceramic with the Li2O: Nb2O5: TiO2 mole ratio of 1.52: 0.36: 1.34 have been investigated in this study. The 1.52Li2O-0.36Nb2O5-1.34TiO2 (LNT) ceramic is composed of two phases, the “M-Phase” and Li2TiO3 solid solution (Li2TiO3ss) phase. This new microwave dielectric ceramic has low intrinsic sintering temperature ( ~ 1100 oC ) and good microwave dielectric properties of middle permittivity (εr ~38.6), high Q×f value up to 7712 GHz, and near zero τf value (~ 4.64 ppm/oC). In addition, the sintering temperature of the LNT ceramics could be lowered down effectively from 1100 oC to 900 oC by adding 1 wt.% B2O3. Good microwave dielectric properties of εr = 42.5, Q*f =6819 GHz and τf = 2.7 ppm/oC could be obtained at 900 oC, which indicate the ceramics would be promising candidates for low-temperature co-fired ceramics (LTCC) applications.

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Low-temperature sintering and densification kinetics of sol-gel derived lithium-mica glass-ceramics through MgF2 addition

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2019.119497 ◽

2019 ◽

Vol 521 ◽

pp. 119497 ◽

Cited By ~ 1

Author(s):

Mohammad Reza Tohidifar

Keyword(s):

Low Temperature ◽

Sol Gel ◽

Glass Ceramics ◽

Low Temperature Sintering ◽

Kinetics Of

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Low-Temperature Sintering and Microstructure of Mg4(Nb2-xVx)O9Microwave Dielectric Ceramic by V Substitution for Nb

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.6154 ◽

2003 ◽

Vol 42 (Part 1, No. 9B) ◽

pp. 6154-6157 ◽

Cited By ~ 39

Author(s):

Akinori Kan ◽

Hirotaka Ogawa ◽

Atsushi Yokoi ◽

Hitoshi Ohsato

Keyword(s):

Low Temperature ◽

Low Temperature Sintering ◽

Dielectric Ceramic

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Low-Temperature Sintering of Apatite-Type Lanthanum Silicate with Fluoride Additives

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.62.235 ◽

2010 ◽

Vol 62 ◽

pp. 235-240

Author(s):

Junichi Takahashi ◽

Hidetoshi Honda ◽

Takaya Akashi ◽

Kazutomo Abe ◽

Hidenobu Itoh ◽

...

Keyword(s):

Activation Energy ◽

Liquid Phase ◽

Low Temperature ◽

Bulk Density ◽

Grain Growth ◽

Low Temperatures ◽

Abnormal Grain Growth ◽

Low Temperature Sintering ◽

Lanthanum Silicate ◽

Apatite Type

Various fluorides (3 - 8 wt%) were added to a La9.33Si6O26 (LSO) powder synthesized by calcining the corresponding oxides mixture at 1100°C for 4 h. The addition of BaF2, AlF3 or Ba3Al2F12 caused an appreciable and substantial increase in bulk density after sintering at 1400º and 1450°C, respectively. These fluorides melt below 1400°C to form liquid phase which could assist the densification at low temperatures. Abnormal grain growth was observed for LSO samples with the addition of AlF3 and Ba3Al2F12, but it was effectively suppressed by stepwise sintering at 1400º and 1450°C. The BaF2 addition brought about the simultaneous promotion of densification and moderate grain growth, leading to the production of a densified LSO sample showing a conductivity of 1.5 x 10–2 Scm–1 at 800°C with an activation energy of 1.23 eV.

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