Corrosion behavior of oxide films on AISI 316L SS formed in high temperature water with simultaneous injection of zinc and aluminum

2018 ◽  
Vol 731 ◽  
pp. 1230-1237 ◽  
Author(s):  
Shenghan Zhang ◽  
Rongxue Shi ◽  
Yuqiang Chen ◽  
Meiqi Wang
CORROSION ◽  
1961 ◽  
Vol 17 (12) ◽  
pp. 566t-570t ◽  
Author(s):  
STANLEY KASS

Abstract The aqueous corrosion behavior of Zircaloy-2 surfaces contaminated with reaction product from the HNO3-HF-H2O etchant was studied. Surfaces slightly contaminated with residual etchant exhibit cloudy surfaces and corrode more rapidly than non-contaminated surfaces. The surfaces of coupons severely contaminated exhibit white continuously spalling oxide films in high temperature water. In 750 F steam, however, the corrosion is characterized initially by a spalling corrosion film followed by an adherent corrosion product. 6.3.20, 2.3.6


Author(s):  
Morrall Daniel ◽  
Huang Yen-Jui ◽  
Yabuuchi Kiyohiro ◽  
Kimura Akihiko ◽  
Ishizaki Takahiro ◽  
...  

CORROSION ◽  
1968 ◽  
Vol 24 (10) ◽  
pp. 336-337 ◽  
Author(s):  
T. NAKAYAMA ◽  
Y. OSHIDA

Abstract Initial oxide film formed on 18–8 stainless steel in high temperature water at 300 C (572 F) for 1 hour was identical with corundum type crystals like (Cr, Fe)2O3 alone or its coexistence with α-Fe2O3. On the contrary, the oxide film produced by prolonged oxidation (24 hours) consisted mainly of the spinel type crystals containing nickel.


2014 ◽  
Vol 1015 ◽  
pp. 513-516
Author(s):  
Yu Tan ◽  
Wan Wan Wang ◽  
Sheng Han Zhang ◽  
Ke Xin Liang

A transient photoelectrochemical analysis method is improved to investigate the semiconductor properties of oxide films on stainless steel 316L oxidized in high-temperature water. A minute amount of ZnO was added to the high-temperature water environment to alter the semiconductor properties of the oxide film deposited on stainless steel 316L. Characteristic phases in the oxide were investigated using the improved photoelectrochemical analysis method, and the semiconductor properties of the oxide film on stainless steel 316L suggested the presence of an n-type semiconductor. The photoelectrochemical dephasing angle showed movement of the flat band potential in the negative direction after ZnO addition.


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