Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

2019 ◽  
Vol 780 ◽  
pp. 476-481 ◽  
Author(s):  
Hong Gu ◽  
Cong Hu ◽  
Jiale Wang ◽  
Youming Lu ◽  
Jin-Ping Ao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Free Standing

Effect of GaN Drift-Layer Thicknesses in Vertical Schottky Barrier Diodes on Free-Standing GaN Substrates

2018 ◽  
Author(s):  
A. Sandupatla ◽  
S. Arulkumaran ◽  
G.I. Ng ◽  
K. Ranjan ◽  
M. Deki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Free Standing ◽  
Drift Layer

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

2020 ◽  
Vol 59 (1) ◽  
pp. 010906 ◽  
Author(s):  
S. Abhinay ◽  
S. Arulkumaran ◽  
G.I. Ng ◽  
K. Ranjan ◽  
M. Deki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes ◽  
Free Standing ◽  
Drift Layer

scholarly journals GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

AIP Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 045007 ◽  
Author(s):  
A. Sandupatla ◽  
S. Arulkumaran ◽  
G. I. Ng ◽  
K. Ranjan ◽  
M. Deki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Layer Thickness ◽  
Schottky Barrier Diodes ◽  
Free Standing ◽  
Drift Layer

Free-standing Diamond Single Crystal Film for Electronics Applications

2005 ◽  
Vol 905 ◽  
Author(s):  
Jie Yang ◽  
Weixiao Huang ◽  
T. P. Chow ◽  
James E. Butler
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Chemical Properties ◽  
Structural Quality ◽  
Schottky Barrier Diodes ◽  
Free Standing ◽  
Crystal Film ◽  
Single Crystal Diamond ◽  
Transparent Semiconductor ◽  
Radiation Conditions

AbstractHigh quality single crystal diamond film is an excellent transparent semiconductor material. Combined with its good electrical, optical, thermal and chemical properties, diamond-based semiconductor devices offer the potential of operation at very high voltages (>10 kV), power levels, and temperatures (>400°C) and under extreme radiation conditions.In this paper, we exploit the optical transparent property of MPCVD single crystal diamond films to correlate the quality of the epi-layers with the performance of Schottky barrier diodes fabricated on the layer. We used optical microscopy to observe stress induced birefringence caused by defects/dislocations in the material and micro- Raman/photoluminescence to detect relative amounts of non-diamond carbon and color centers (nitrogen and silicon atom complexes with lattice vacancies) in the material. High structural quality (low stress) is correlated with the properties of Schottky barrier diodes fabricated in the material. Vertical devices made from a 20 µm homo-epi-layer have been shown high breakdown fields of 1.85 MVcm-1 (BV = 3.7 kV) and conduction of 0.6 A/cm2 at 20V forward drop at 290 °C. Through device failure analysis, we can conclude that the 1.85 MVcm-1 field is only a lower limit for the material. Local stresses (dislocations) and point defects appear to be the main reasons for the high voltage failure of our single crystal diamond rectifiers.

GaN Schottky Barrier Diodes on Free-Standing GaN Wafer

2017 ◽  
Vol 6 (10) ◽  
pp. N216-N220 ◽  
Author(s):  
Xinke Liu ◽  
Hong Gu ◽  
Kuilong Li ◽  
Jianfeng Wang ◽  
Lei Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Free Standing

1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

2017 ◽  
Vol 56 (2) ◽  
pp. 026501 ◽  
Author(s):  
Xinke Liu ◽  
Qiang Liu ◽  
Chao Li ◽  
Jianfeng Wang ◽  
Wenjie Yu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Contact Material ◽  
Schottky Barrier Diodes ◽  
Free Standing ◽  
Cmos Compatible

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity

2020 ◽  
Vol 13 (9) ◽  
pp. 096502
Author(s):  
Yu Lu ◽  
Feng Zhou ◽  
Weizong Xu ◽  
Dongsheng Wang ◽  
Yuanyang Xia ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Turn On ◽  
High Uniformity
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