Experiment and calculation: The Li(Zn, Mn)PO4 solid solution ceramics with low dielectric constant, high quality factor, and low densification temperature

2020 ◽  
Vol 842 ◽  
pp. 155709 ◽  
Author(s):  
Rui Peng ◽  
Yuanxun Li ◽  
Hua Su ◽  
Yongcheng Lu ◽  
Minshu Chen ◽  
...  
Keyword(s):  
Solid Solution ◽  
Dielectric Constant ◽  
Quality Factor ◽  
High Quality Factor ◽  
Low Dielectric Constant ◽  
High Quality ◽  
Low Dielectric ◽  
Densification Temperature

Low-Temperature Sintering and Microwave Dielectric Properties of (Ca0.9Mg0.1)SiO3 Ceramic with Li2CO3 Addition

2014 ◽  
Vol 602-603 ◽  
pp. 748-751 ◽  
Author(s):  
Xin Hui Zhao ◽  
Min Jia Wang ◽  
Qi Long Zhang ◽  
Hui Yang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Low Dielectric Constant ◽  
Low Temperature Sintering ◽  
Low Dielectric ◽  
Densification Temperature ◽  
Microwave Dielectric

(Ca0.9Mg0.1)SiO3ceramics possess a low dielectric constant and a highQfvalue, however, the densification temperature of (Ca0.9Mg0.1)SiO3ceramics is higher than 1280°C. In this paper, the effect of Li2CO3addition on sinterability and dielectric properties of (Ca0.9Mg0.1)SiO3ceramics were studied. The phase presence and surface morphology were determined by XRD and SEM techniques, respectively. CaSiO3and Ca2MgSi2O7phases were observed. With the addition of >2.0 wt% Li2CO3, the sintering temperature of (Ca0.9Mg0.1)SiO3ceramic was significantly lowered, reaching to 1070°C. (Ca0.9Mg0.1)SiO3ceramics with 4wt% Li2CO3sintered at 1070°C for 3 h shows excellent dielectric properties:εr=5.91,Qf= 15300GHz (at 10GHz).

Microwave Materials with High Q and Low Dielectric Constant for Wireless Communications.

2004 ◽  
Vol 833 ◽  
Author(s):  
Hitoshi Ohsato
Keyword(s):  
Solid Solution ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Solution Composition ◽  
Microwave Dielectrics ◽  
Solid Solution Composition ◽  
High Q ◽  
Low Dielectric ◽  
Phase Group ◽  
Microwave Materials

ABSTRACTMicrowave dielectrics with high Q and low εr are expected for millimeterwave applications. In this paper the preparation and properties of some candidates for microwave dielectrics such as forsterite, willemite, alumina, corundum-type compounds, green phase of Y2BaCuO5 are presented. High purity forsterite has low εr of 7.0 high Q·f of 270000 GHz and τf of -65ppm/°C. Willemite also has low εr of 6.5, and high Q·f of 160000 GHz. Alumina has ultra high Q·f of 680000GHz with εr of 10.05, and τf of -60 ppm/°C. Mg4(Nb2-x Tax)O9 which belongs to corundum group has εr of 11.5, Q·f of 350000 GHz, and τf of -70ppm/°C. Y2Ba(Cu1/4Zn3/4)O5 which belongs to green phase group has εr of 15.4, Q·f of 220000 GHz. The τf’s of these materials, which are an important property for millimeterwave applications, have been adjusted to zero ppm/°C by the addition of rutile, or adjustment of solid solution composition.

A Long Bar Type Silicon Resonator with a High Quality Factor

2014 ◽  
Vol 134 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Nguyen Van Toan ◽  
Masaya Toda ◽  
Yusuke Kawai ◽  
Takahito Ono
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Type Silicon ◽  
Silicon Resonator

scholarly journals Coherent suppression of backscattering in optical microresonators

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Andreas Ø. Svela ◽  
Jonathan M. Silver ◽  
Leonardo Del Bino ◽  
Shuangyou Zhang ◽  
Michael T. M. Woodley ◽  
...  
Keyword(s):  
Quality Factor ◽  
Bulk Material ◽  
Near Field ◽  
High Quality Factor ◽  
Dual Frequency ◽  
High Quality ◽  
Frequency Combs ◽  
Optical Microresonators ◽  
Whispering Gallery ◽  
The Stability

AbstractAs light propagates along a waveguide, a fraction of the field can be reflected by Rayleigh scatterers. In high-quality-factor whispering-gallery-mode microresonators, this intrinsic backscattering is primarily caused by either surface or bulk material imperfections. For several types of microresonator-based experiments and applications, minimal backscattering in the cavity is of critical importance, and thus, the ability to suppress backscattering is essential. We demonstrate that the introduction of an additional scatterer into the near field of a high-quality-factor microresonator can coherently suppress the amount of backscattering in the microresonator by more than 30 dB. The method relies on controlling the scatterer position such that the intrinsic and scatterer-induced backpropagating fields destructively interfere. This technique is useful in microresonator applications where backscattering is currently limiting the performance of devices, such as ring-laser gyroscopes and dual frequency combs, which both suffer from injection locking. Moreover, these findings are of interest for integrated photonic circuits in which back reflections could negatively impact the stability of laser sources or other components.

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