Ternary Vss-V3Si-V5SiB2 eutectic formation in the V-Si-B system

2022 ◽  
pp. 163722
Author(s):  
W.G. Yang ◽  
G. Hasemann ◽  
M. Yazlak ◽  
B. Gorr ◽  
R. Schwaiger ◽  
...  
Keyword(s):  
Pharmaceutics ◽  
2021 ◽  
Vol 13 (5) ◽  
pp. 618
Author(s):  
Hakyeong Kim ◽  
Soeun Jang ◽  
Il Won Kim

Improving dissolution properties of active pharmaceutical ingredients (APIs) is a critical step in drug development with the increasing occurrence of sparingly soluble APIs. Cocrystal formation is one of the methods to alter the physicochemical properties of APIs, but its dissolution behavior in biorelevant media has been scrutinized only in recent years. We investigated the combined strategy of cocrystallization and eutectic formation in this regard and utilized the cocrystal model system of naproxen and three pyridinecarboxamide isomers. Binary melting diagrams were constructed to discover the eutectic compositions of the three cocrystals with excess amounts of pyridinecarboxamides. The melt–crystallized eutectics and cocrystals were compared in their dissolution behaviors with respect to neat naproxen. The eutectics enhanced the early dissolution rates of the cocrystals in both the absence and presence of biologically relevant bile salt and phospholipid components, whereas the cocrystal dissolution was expedited and delayed, respectively. The combined strategy in the present study will be advantageous in maximizing the utility of the pharmaceutical cocrystals.


2013 ◽  
Vol 92 ◽  
pp. 317-320 ◽  
Author(s):  
Sainan Yuan ◽  
Lina Jia ◽  
Limin Ma ◽  
Hua Jiang ◽  
Hu Zhang

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.


2003 ◽  
Vol 404 (1-2) ◽  
pp. 213-226 ◽  
Author(s):  
Mingda Bi ◽  
Sung-Joo Hwang ◽  
Kenneth R. Morris

1998 ◽  
Vol 11 (7) ◽  
pp. 637-644 ◽  
Author(s):  
C H Choi ◽  
H S Kim ◽  
O C Standard ◽  
M J Kim ◽  
Y Zhao ◽  
...  

1991 ◽  
Vol 74 (7) ◽  
pp. 1541-1546 ◽  
Author(s):  
Ji-Ping Zhou ◽  
Charles C. Sorrell ◽  
Shi-Xue Dou ◽  
Miles H. Apperley
Keyword(s):  

2008 ◽  
Vol 21 (4) ◽  
pp. 1307-1314 ◽  
Author(s):  
Hyun Jung Kim ◽  
Jong Hoon Kim ◽  
Sung Hun Youn ◽  
Chul Soo Shin

RSC Advances ◽  
2015 ◽  
Vol 5 (28) ◽  
pp. 22178-22187 ◽  
Author(s):  
Olga Stolarska ◽  
Ana Soto ◽  
Héctor Rodríguez ◽  
Marcin Smiglak

The composition and temperature of three eutectic mixtures of ionic liquids and their physical properties (density, viscosity, and surface tension) are presented. Melting temperature depressions of up to ca. 50 K were found with regard to those of the parent ionic liquids.


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