Large modification of crystal–melt interface shape during Si crystal growth by using electromagnetic Czochralski method (EMCZ)

2006 ◽  
Vol 292 (2) ◽  
pp. 252-256 ◽  
Author(s):  
Masahito Watanabe ◽  
Daniel Vizman ◽  
Jochen Friedrich ◽  
Georg Müller
Keyword(s):  
Crystal Growth ◽  
Czochralski Method ◽  
Interface Shape

LIQUID–SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD

1960 ◽  
Vol 38 (3) ◽  
pp. 439-443 ◽  
Author(s):  
W. D. Edwards
Keyword(s):  
Crystal Growth ◽  
Czochralski Method ◽  
Interface Shape ◽  
Solid Interface ◽  
Silicon Crystals ◽  
Macroscopic Structure

A study has been made of the macroscopic structure of the liquid–solid interface which exists during growth of silicon crystals by the Czochralski method. In two crystals the interface was seen to contain a (111) facet. The development of such facets is discussed with reference to current crystal growth theories.

Study of melt convection and interface shape during sapphire crystal growth by Czochralski method

2012 ◽  
Vol 55 (25-26) ◽  
pp. 8003-8009 ◽  
Author(s):  
Haisheng Fang ◽  
Jun Tian ◽  
Quanjiang Zhang ◽  
Yaoyu Pan ◽  
Sen Wang
Keyword(s):  
Crystal Growth ◽  
Czochralski Method ◽  
Sapphire Crystal ◽  
Interface Shape ◽  
Melt Convection

scholarly journals Numerical Analysis of Difficulties of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 25
Author(s):  
Xia Tang ◽  
Botao Liu ◽  
Yue Yu ◽  
Sheng Liu ◽  
Bing Gao
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Czochralski Method ◽  
Liquid Interface ◽  
Spiral Growth ◽  
Growth Time ◽  
Large Size ◽  
Crystal Diameter ◽  
Solid Liquid Interface ◽  
Solid Liquid

The difficulties in growing large-size bulk β-Ga2O3 single crystals with the Czochralski method were numerically analyzed. The flow and temperature fields for crystals that were four and six inches in diameter were studied. When the crystal diameter is large and the crucible space becomes small, the flow field near the crystal edge becomes poorly controlled, which results in an unreasonable temperature field, which makes the interface velocity very sensitive to the phase boundary shape. The effect of seed rotation with increasing crystal diameter was also studied. With the increase in crystal diameter, the effect of seed rotation causes more uneven temperature distribution. The difficulty of growing large-size bulk β-Ga2O3 single crystals with the Czochralski method is caused by spiral growth. By using dynamic mesh technology to update the crystal growth interface, the calculation results show that the solid–liquid interface of the four-inch crystal is slightly convex and the center is slightly concave. With the increase of crystal growth time, the symmetry of cylindrical crystal will be broken, which will lead to spiral growth. The numerical results of the six-inch crystal show that the whole solid–liquid interface is concave and unstable, which is not conducive to crystal growth.

Single crystal growth of Ga 3 Ni 2 by the Czochralski method

2016 ◽  
Vol 449 ◽  
pp. 114-118 ◽  
Author(s):  
Magdalena Wencka ◽  
Mirtha Pillaca ◽  
Peter Gille
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Czochralski Method ◽  
Single Crystal Growth

A numerical and experimental study of natural convection and interface shape in crystal growth

1997 ◽  
Vol 173 (3-4) ◽  
pp. 492-502 ◽  
Author(s):  
G.H. Yeoh ◽  
G. de Vahl Davis ◽  
E. Leonardi ◽  
H.C. de Groh ◽  
M. Yao
Keyword(s):  
Experimental Study ◽  
Crystal Growth ◽  
Natural Convection ◽  
Interface Shape
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