Intergranular film thickness of self-reinforced silicon carbide ceramics

2004 ◽  
Vol 24 (15-16) ◽  
pp. 3795-3800 ◽  
Author(s):  
Heon-Jin Choi ◽  
Young-Wook Kim
Keyword(s):  
Silicon Carbide ◽  
Film Thickness ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

Effects of Vickers Cracks on the Mechanical Properties of Solid-phase-sintered Silicon Carbide Ceramics

2012 ◽  
Vol 27 (9) ◽  
pp. 965-969
Author(s):  
Xiao YANG ◽  
Xue-Jian LIU ◽  
Zheng-Ren HUANG ◽  
Gui-Ling LIU ◽  
Xiu-Min YAO
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Solid Phase ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics ◽  
Sintered Silicon

Vickers indentation crack analysis of solid-phase-sintered silicon carbide ceramics

2013 ◽  
Vol 39 (1) ◽  
pp. 841-845 ◽  
Author(s):  
Xiao Yang ◽  
Xuejian Liu ◽  
Zhengren Huang ◽  
Xiuming Yao ◽  
Guiling Liu
Keyword(s):  
Silicon Carbide ◽  
Solid Phase ◽  
Vickers Indentation ◽  
Crack Analysis ◽  
Indentation Crack ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics ◽  
Sintered Silicon

scholarly journals Surface Nitridation of Silicon Carbide Ceramics

1989 ◽  
Vol 97 (1131) ◽  
pp. 1348-1353
Author(s):  
Tadahisa ARAHORI ◽  
Nobuya IWAMOTO
Keyword(s):  
Silicon Carbide ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

scholarly journals High-temperature oxidation behavior of reaction-formed silicon carbide ceramics

1995 ◽  
Vol 10 (12) ◽  
pp. 3232-3240 ◽  
Author(s):  
Linus U.J.T. Ogbuji ◽  
M. Singh
Keyword(s):  
Silicon Carbide ◽  
Weight Loss ◽  
Oxidation Product ◽  
Oxidation Behavior ◽  
Light And Electron Microscopy ◽  
Initial Weight Loss ◽  
Temperature Oxidation ◽  
Carbide Ceramics ◽  
High Temperature Oxidation Behavior ◽  
Silicon Carbide Ceramics

The oxidation behavior of reaction-formed silicon carbide (RFSC) ceramics was investigated in the temperature range of 1100 to 1400 °C. The oxidation weight change was recorded by TGA; the oxidized materials were examined by light and electron microscopy, and the oxidation product by x-ray diffraction analysis (XRD). The materials exhibited initial weight loss, followed by passive weight gain (with enhanced parabolic rates, kp), and ending with a negative (logarithmic) deviation from the parabolic law. The weight loss arose from the oxidation of residual carbon, and the enhanced kp values from internal oxidation and the oxidation of residual silicon, while the logarithmic kinetics is thought to have resulted from crystallization of the oxide. The presence of a small amount of MoSi2 in the RFSC material caused a further increase in the oxidation rate. The only solid oxidation product for all temperatures studied was silica.

Resonant ultrasound spectroscopy of silicon carbide ceramics SiC‒AlN

2021 ◽  
pp. 136-140
Author(s):  
E. G. Pashuk ◽  
G. D Kardashova ◽  
Sh. A. Khalilov
Keyword(s):  
Silicon Carbide ◽  
Elastic Moduli ◽  
Ultrasonic Spectroscopy ◽  
Resonant Ultrasound Spectroscopy ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Complete Set ◽  
Resonant Ultrasound ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

The paper discusses the possibility of using resonant ultrasonic spectroscopy (RUS) as a source of information for the physics and technology of obtaining silicon carbide ceramics by the example of samples of the composition SiC ‒ 25 % AlN, obtained by the method of spark plasma sintering. The possibility of obtaining a complete set of elastic moduli (EM) of samples with an error of less than 1 % is shown. At the same time, the requirements for surface quality are significantly reduced. The revealed functional relationship between EM and porosity makes it possible to create a non-destructive method of porosity control and calculate the elastic moduli at zero porosity (i. e., the elastic modulus of the ceramic matrix EM0). Comparison of EM0 samples obtained at different parameters of the technological process allows determining their optima values..

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