The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets

Aluminium-doped zinc oxide (AZO) ceramic green compacts at a size of 170 × 340 × 17 mm have been prepared by slip casting. An AZO slurry with good fluidity and viscosity was obtained when 1.2 wt% of dispersant was added, which indicates that the slurry prepared with micrometre particles is more suitable for slip casting. The densification and electrical properties of the AZO targets prepared by particles with different sizes were investigated after sintering from 1380 to 1460°C. The results showed that the relative density of the AZO target prepared with 45 nm particles could reach nearly 98% at 1380°C; the resistivity of the AZO target prepared with nanometre particles could be as low as 1.6 × 10−3 Ω·cm at 1400°C; and the average transmittance of the AZO film prepared with nanometre particles could reach a maximum value of 93.73% in the visible region at 250 W. In this study, the correlation between the density, resistivity, and grain growth of AZO ceramic green compacts was studied.

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Study of High-Density Zn-Doped Tungsten Trioxide Ceramic Targets

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.779-780.182 ◽

2013 ◽

Vol 779-780 ◽

pp. 182-186 ◽

Cited By ~ 1

Author(s):

Chao Xiao ◽

Zhong Jian Zhang ◽

Qing Qing Gao ◽

Cun Qi Liu ◽

Fu Liang Shang ◽

...

Keyword(s):

Zinc Oxide ◽

Relative Density ◽

Tungsten Oxide ◽

Vickers Hardness ◽

Tungsten Trioxide ◽

Bending Strength ◽

Oxide Ceramic ◽

Sintering Conditions ◽

Ceramic Targets ◽

Effect Of The Composition

This paper deals with the preparation of zinc oxide doped tungsten oxide target by sintering in oxygenated flow atmosphere. The effect of the composition and the sintering conditions on the properties and microstructures of the targets has been studied. The optimal sintering conditions were found. The sintered zinc doped tungsten oxide ceramic target can achieve a relative density of 99.58%, a bending strength of 31.79MPa and a Vickers hardness of 349MPa.

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Sintering of High Quality Titanium-Doped Zinc Oxide Ceramic Sputtering Target

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.697.198 ◽

2016 ◽

Vol 697 ◽

pp. 198-202 ◽

Cited By ~ 1

Author(s):

Chen Bing Pi ◽

Xue Xian Cai ◽

Chao Xiao ◽

Hai Peng Yang ◽

Ji Hua Gao ◽

...

Keyword(s):

Zinc Oxide ◽

Bending Strength ◽

Oxide Ceramic ◽

X Ray Diffraction ◽

High Quality ◽

Conductive Films ◽

Mechanical And Electrical Properties ◽

Ultrahigh Density ◽

Ceramic Targets ◽

Sintering Condition

The ultrahigh density zinc oxide doped with 1wt% TiO2 (ZTO) ceramic targets were prepared by pressureless sintering. Scanning electron microscopy and X-ray diffraction analysis were used to characterize the morphologies and structure of the sintered ZTO targets. The effects of the sintering temperatures on the microstructure, densification behavior, mechanical and electrical properties were discussed and the optimal sintering condition was obtained. The ZTO targets sintered at 1350°C for 3 hours achieved a relative density of 99.7%, a bending strength of 115MPa, a Vickers hardness of 222.16HV and a a electrical resistivity of 1Ω·cm, which was excellent as a high-quality sputtering target to deposit ZnO-based transparent conductive films.

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The microstructure, mechanical and electrical properties of Niobium pentoxide-doped Titanium oxide ceramic targets

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/182/1/012005 ◽

2017 ◽

Vol 182 ◽

pp. 012005 ◽

Cited By ~ 1

Author(s):

Qi Ling ◽

TingTing Xu ◽

LianZi Wu ◽

Wei Peng ◽

ZuoXiang Zhu ◽

...

Keyword(s):

Electrical Properties ◽

Titanium Oxide ◽

Niobium Pentoxide ◽

Oxide Ceramic ◽

Mechanical And Electrical Properties ◽

Ceramic Targets

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Effect of type and amount of alumina as dopant over the densification and the electrical properties of zinc oxide ceramic electrodes

Boletín de la Sociedad Española de Cerámica y Vidrio ◽

10.1016/j.bsecv.2020.01.003 ◽

2020 ◽

Author(s):

M.-J. Sánchez-Rivera ◽

M.J. Orts ◽

V. Pérez-Herranz ◽

S. Mestre

Keyword(s):

Zinc Oxide ◽

Electrical Properties ◽

Oxide Ceramic ◽

Ceramic Electrodes

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Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets

Coatings ◽

10.3390/coatings10080708 ◽

2020 ◽

Vol 10 (8) ◽

pp. 708

Author(s):

Li-Chung Yang ◽

Der-Ru Jung ◽

Fang-Ru Po ◽

Chia-His Hus ◽

Jau-Shiung Fang

Keyword(s):

Zinc Oxide ◽

Electrical Resistivity ◽

Electrical Properties ◽

Transparent Conducting Oxide ◽

Optical Transmittance ◽

Zinc Oxide Films ◽

Transparent Conducting ◽

Ceramic Targets ◽

Aluminum Zinc Oxide ◽

Mg Doped

Bandgap enlarged Mg-doped aluminum zinc oxide (Mg-doped AZO) film is a potential transparent conducting oxide for applications in photonics devices. The oxide film normally deposited by sputtering, particularly using ceramic targets, while maintaining its pristine property for the film deposited using metallic targets is rarely addressed. This study investigated the optical and electrical properties of Mg-doped AZO films that were performed by a magnetron reactive co-sputtering method using metallic Mg and Al–Zn targets. Doping of Mg in the AZO significantly affects the electrical resistivity and optical transmission of the films because Mg tends to replace part of Zn lattice sites. The 1.2 at.% Mg-doped AZO film had an electrical resistivity of 7.9 × 10−4 Ω·cm, an optical transmittance of 92.6% in the visible light range, and a bandgap of 3.66 eV when the film was post-annealed at 600 °C. The Mg doping widens the bandgap and, thus, increases the transmittance of the AZO film. Because of the superior electrical and optical characteristics, the Mg-doped AZO films prepared using the metallic targets can be a reliable transparent conducting oxide for applications.

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