Laser heating and oxygen partial pressure effects on the dynamic magnetic properties of perpendicular CoFeAlO films

2016 ◽  
Vol 409 ◽  
pp. 143-147 ◽  
Author(s):  
Di Wu ◽  
Wei Li ◽  
Minghong Tang ◽  
Zongzhi Zhang ◽  
Shitao Lou ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Laser Heating ◽  
Pressure Effects

scholarly journals Influence of oxygen partial pressure on the microstructural and magnetic properties of Er-doped ZnO thin films

AIP Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 067105 ◽  
Author(s):  
Wei-Bin Chen ◽  
Xue-Chao Liu ◽  
Fei Li ◽  
Hong-Ming Chen ◽  
Ren-Wei Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Er Doped

Influence of oxygen partial pressure on structural, transport and magnetic properties of Co doped films

2009 ◽  
Vol 149 (47-48) ◽  
pp. 2210-2214 ◽  
Author(s):  
Bakhtyar Ali ◽  
Abdul K. Rumaiz ◽  
Arif Ozbay ◽  
Edmund R. Nowak ◽  
S. Ismat Shah
Keyword(s):  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Co Doped

COMPARISON OF MAGNETIC PROPERTY OF Cu-, Al-, AND Li-DOPED ZnO DILUTE MAGNETIC SEMICONDUCTOR THIN FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 81-85 ◽  
Author(s):  
L. H. VAN ◽  
J. DING ◽  
M. H. HONG ◽  
Z. C. FAN ◽  
L. WANG
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Property ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Thin Films ◽  
Doped Zno ◽  
Lower Temperature

The properties of Cu -, Al -, and Li -doped ZnO dilute magnetic semiconductor (DMS) have been analyzed and compared. Zincite with wurtzite structures have been synthesized successfully on SiO 2 (101) and SiO 2 (110) substrates in both the Cu – ZnO and Li – ZnO DMS. The highly textured ZnO (002) peaks were able to form in the Cu – ZnO system at 400°C. However, it formed at even much lower temperature in the Li – ZnO system, that is only 25°C. ZnO (002) peaks in both systems were formed without any impurity phases. However, no crystalline structure is synthesized in the Al – ZnO system. The thin films formed are amorphous. The structural and related magnetic properties of the films were analyzed by XRD, AFM, and VSM. The films were found to be at their highest magnetism at the value of 3.1 emu/cm3 for Co – ZnO and 2.5 emu/cm3 for Li – ZnO , synthesized at 400°C, and under 1 × 10-4 Torr oxygen partial pressure.

Epitaxial Magnetic Garnet Thin Films and Heterostructures by Pulsed Laser Deposition

1994 ◽  
Vol 341 ◽  
Author(s):  
B. M. Simion ◽  
R. Ramesh ◽  
V. G. Keramidas ◽  
R. L. Pfeffer ◽  
G. Thomas ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gadolinium Gallium Garnet ◽  
Rutherford Back Scattering ◽  
Single Crystalline ◽  
Iron Garnet

AbstractEpitaxial yttrium-iron-garnet (YIG) films, bismuth-iron-garnet (BIG) films, and YIG/BIG heterostructures have been grown on [111] oriented single crystalline gadolinium-gallium-garnet (GGG) substrates by pulsed laser deposition (PLD), using a KrF excimer laser system. The films under study were grown over a range of temperatures from 600°C to 800°C and at 100 mTorr oxygen partial pressure. The effects of oxygen partial pressure during cooling on the structure, composition and magnetic properties of the films were investigated, employing X-ray diffraction, Rutherford back scattering spectroscopy coupled with He ion channeling, and vibration sample magnetometry. All specimens under study indicated that, independent of the film-substrate mismatch, the grown films were single crystalline in the [111] orientation. Preliminary studies on the effects of cooling oxygen partial pressure on the film structure indicate an increase in lattice distortion in the direction normal to the film surface with decreasing pressure. The magnetic properties of the films are comparable to the YIG bulk properties, and all films indicated in plane preferential magnetization, independent of cooling conditions.

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