Tensegrital wheel for enhanced planetary surface mobility: Part 2 - Performance assessment of a ruggedized, double-layer tensegrital wheel

2021 ◽  
Author(s):  
Georgia Crowther ◽  
Dimitrios (Dimi) Apostolopoulos ◽  
Stuart Heys
Keyword(s):  
Performance Assessment ◽  
Double Layer ◽  
Planetary Surface ◽  
Surface Mobility

Tensegrital wheel for enhanced planetary surface mobility: Part 1 – Design and evolution

2022 ◽  
Vol 100 ◽  
pp. 11-24
Author(s):  
Georgia Crowther ◽  
Dimitrios (Dimi) Apostolopoulos ◽  
Stuart Heys
Keyword(s):  
Planetary Surface ◽  
Surface Mobility

Fractionated robotic architectures for planetary surface mobility systems

2014 ◽  
Vol 95 ◽  
pp. 15-29 ◽  
Author(s):  
Farah Alibay ◽  
Vishnu R. Desaraju ◽  
Jessica E. Duda ◽  
Jeffrey A. Hoffman
Keyword(s):  
Planetary Surface ◽  
Surface Mobility

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

Ultra high resolution SEM at high voltage images individual fab fragments applied as molecular label to cell surface receptors

1989 ◽  
Vol 47 ◽  
pp. 70-71
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Resolution ◽  
High Energy ◽  
Metal Coating ◽  
Beam Diameter ◽  
Surface Receptors ◽  
Surface Mobility ◽  
Metal Atoms ◽  
Shadowing Effect ◽  
Imaging Mode ◽  
Deposition Techniques

Topographic ultra high resolution can now routinely be established on bulk samples in cold field emission scanning electron microscopy with a second generation of microscopes (FSEM) designed to provide 0.5 nm probe diameters. If such small probes are used for high magnification imaging, topographic contrast is so high that remarkably fine details can be imaged on 2DMSO/osmium-impregnated specimens at ribosome surfaces even without a metal coating. On TCH/osmium-impregnated specimens topographic resolution can be increased further if the SE-I imaging mode is applied. This requires that beam diameter and metal coating thickness be made smaller than the SE range of ~1 nm and background signal contributions be reduced. Subnanometer small probes can be obtained (only) at high accelerating voltages. Subnanometer thin continuous metal films can be produced under the following conditions: self-shadowing effect between metal atoms must be reduced through appropriate deposition techniques and surface mobility of metal atoms must be diminished through high energy sputtering and/or specimen cooling.

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