Preparation of p-type ZnO films with (N,Ga) co-doping by MOVPE

ABSTRACTWe report on the attempt to fabricate p-type ZnO thin films using various doping techniques based on the pulsed laser deposition (PLD). As an accepter, we have doped the N atom by using high purity nitric monoxide (NO) ambient gas. NO is dissociated into N and O at an energy of 6.5 eV which is lower than at N2 (9.76 eV). Moreover the dissociation reaction of NO is simpler than other nitrogenous gases such as N2O, NO2, and NH3. One of our doping techniques is co-doping of Ga and N atom by ablating ZnO:Ga target in NO gas, and another is the ablation of the metal Zn target in NO gas. Both of Ga and N co-doped ZnO films and N doped ZnO films have c-axis orientation as well as undoped ZnO films. The surfaces of these doped films are rough while the undoped ZnO thin film is very smooth and have hexagonally shaped grains. We found it possible to fabricate the p-type ZnO film by ablating the metal Zn target in NO gas.

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Fabrication of high hole-carrier density p-type ZnO thin films by N–Al co-doping

Applied Surface Science ◽

10.1016/j.apsusc.2006.08.010 ◽

2007 ◽

Vol 253 (8) ◽

pp. 3825-3827 ◽

Cited By ~ 8

Author(s):

Zhang Xiaodan ◽

Fan Hongbing ◽

Zhao Ying ◽

Sun Jian ◽

Wei Changchun ◽

...

Keyword(s):

Thin Films ◽

Carrier Density ◽

Zno Thin Films ◽

Co Doping ◽

P Type

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Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

MRS Proceedings ◽

10.1557/opl.2013.4 ◽

2013 ◽

Vol 1494 ◽

pp. 77-82

Author(s):

T. N. Oder ◽

A. Smith ◽

M. Freeman ◽

M. McMaster ◽

B. Cai ◽

...

Keyword(s):

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

X Ray ◽

Sapphire Substrates ◽

Hall Effect Measurements ◽

Sputter Deposited ◽

P Type ◽

Post Deposition ◽

Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

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P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.10.006 ◽

2016 ◽

Vol 100 ◽

pp. 468-473 ◽

Cited By ~ 1

Author(s):

Zhiyuan Zhang ◽

Jingyun Huang ◽

Shanshan Chen ◽

Xinhua Pan ◽

Lingxiang Chen ◽

...

Keyword(s):

Annealing Process ◽

Zno Films ◽

Single Crystalline ◽

P Type

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Mn charge states in GaMnN as a function of Mn concentration and co-doping

MRS Proceedings ◽

10.1557/proc-1040-q09-18 ◽

2007 ◽

Vol 1040 ◽

Cited By ~ 1

Author(s):

Enno Malguth ◽

Axel Hoffmann ◽

Wolfgang Gehlhoff ◽

Matthew H. Kane ◽

Ian T. Ferguson

Keyword(s):

Electron Spin Resonance ◽

Electron Spin ◽

Magnetic Semiconductor ◽

Electron Spin Resonance Spectroscopy ◽

Resonance Spectroscopy ◽

Mg Doping ◽

Co Doping ◽

Spin Resonance ◽

P Type ◽

Mn Concentration

AbstractIn the context of the pursuit of a dilute magnetic semiconductor for spintronic applications, a set of GaMnN samples with varying Mn concentration and Si or Mg co-doping was investigated by optical and electron spin resonance spectroscopy. The results clearly demonstrate how the charge state of Mn is changed between 2+, 3+ and 4+ by Mg and Si co-doping. For p-type GaMnN we show that the introduction of the Mn3+/4+ donor can be compensated by Mg co-doping lowering the Fermi energy below the Mn3+/4+ level. While our results are in agreement with the hypothesis that the infrared photoluminescence appearing in GaMnN upon Mg doping originates from Mn4+, an unambiguous proof is still to be presented. Under this assumption, our measurements show that the Mn4+ center must be excited via an extra-center process at 2.54 eV.

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