Characterisation of amorphous silica in air-oxidised Ti3SiC2 at 500–1000°C using secondary-ion mass spectrometry, nuclear magnetic resonance and transmission electron microscopy

2010 ◽  
Vol 121 (3) ◽  
pp. 453-458 ◽  
Author(s):  
W.K. Pang ◽  
I.M. Low ◽  
J.V. Hanna
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Amorphous Silica ◽  
Secondary Ion Mass Spectrometry ◽  
Transmission Electron ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS

2010 ◽  
Vol 434-435 ◽  
pp. 169-172 ◽  
Author(s):  
Wei Kong Pang ◽  
It Meng Low ◽  
J.V. Hanna
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Amorphous Silica ◽  
Direct Evidence ◽  
Secondary Ion Mass Spectrometry ◽  
Amorphous Sio2 ◽  
Transmission Electron ◽  
First Time ◽  
Secondary Ion

The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at 1000°C.

Applications of Transmission Electron Microscopy and Secondary Ion Mass Spectrometry on Crystal Defect Analysis and Electronic Characterization of Advanced 512Mb DRAM

2006 ◽  
Author(s):  
Serena Lu ◽  
Esther Chen ◽  
Lang-Yu Huang ◽  
Jian-Shing Luo ◽  
Jeremy D. Russell
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Yield Enhancement ◽  
Crystal Defect ◽  
Defect Analysis ◽  
Transmission Electron ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Abstract The capabilities of analytical transmission electron microscopy (TEM), such as high spatial resolution, micro-chemical analysis, etc., have led to an increasingly essential role for TEM-based analysis in process development, defect identification, yield enhancement, and root-cause failure analysis with the dynamic random access memory (DRAM) industry. In this article, several examples are reported to carry out the applications of TEM and secondary ion mass spectrometry on crystal defect analysis and electronic characteristics of advanced 512 Mb DRAMs.

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