Impact of different annealing conditions on physical properties of ZnSe thin films for ecofriendly buffer layer applications

2020 ◽  
Vol 132 ◽  
pp. 110982 ◽  
Author(s):  
Deepak Suthar ◽  
G. Chasta ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Buffer Layer ◽  
Annealing Conditions ◽  
Znse Thin Films

Thermal annealing induced physical properties of ZnSe thin films for buffer layer in solar cells

2020 ◽  
Vol 117 ◽  
pp. 113845 ◽  
Author(s):  
S. Chuhadiya ◽  
R. Sharma ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Physical Properties ◽  
Buffer Layer ◽  
Thermal Annealing ◽  
Znse Thin Films

Physical properties of ZnSe thin films: Air and vacuum annealing evolution to buffer layer applications

2020 ◽  
Vol 384 (4) ◽  
pp. 126097 ◽  
Author(s):  
Ritika Sharma ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
M.D. Kannan ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Buffer Layer ◽  
Vacuum Annealing ◽  
Znse Thin Films

scholarly journals Physical properties and interface studies of YBa2Cu3O7 thin films deposited by laser ablation on Si (111) with buffer layer

1990 ◽  
Vol 164-165 ◽  
pp. 1178-1185 ◽  
Author(s):  
D.H.A. Blank ◽  
W.A.M. Aarnink ◽  
J. Flokstra ◽  
H. Rogalla ◽  
A. van Silfhout
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Physical Properties ◽  
Buffer Layer

Physical properties of spinel iron oxide thin films

1988 ◽  
Vol 3 (2) ◽  
pp. 344-350 ◽  
Author(s):  
C. Ortiz ◽  
G. Lim ◽  
M. M. Chen ◽  
G. Castillo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Physical Properties ◽  
Room Temperature ◽  
Lattice Parameter ◽  
Infrared Transmission ◽  
Transmission Properties ◽  
Annealing Conditions ◽  
Deposition Conditions

This paper describes the complexity of the spinel iron oxides in thin-film configuration. First, the experimental deposition conditions are determined for the parameters of substrate temperature and oxygen flow such that only the “Fe3O4” phase is formed. Then a study is made of how the structural (grain size, lattice parameter, texture), magnetic (M), and optical (visible and infrared transmission) properties of the films depend on the deposition and postdeposition (air annealing) conditions. The experimental deposition region is defined where the films have the most similar physical properties to bulk Fe3O4 and subsequently, after annealing, to bulk gamma Fe2O3. Finally, a discussion is presented of a model that accounts for the anomalous, low values of the magnetic moment for the samples deposited at room temperature. The model proposes an overpopulation of the iron tetrahedral A sites.

ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells

2000 ◽  
Vol 361-362 ◽  
pp. 172-176 ◽  
Author(s):  
A. Rumberg ◽  
Ch. Sommerhalter ◽  
M. Toplak ◽  
A. Jäger-Waldau ◽  
M.Ch. Lux-Steiner
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Buffer Layer ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Znse Thin Films

Preparation and Physical Properties of BI2TI2O7 Single Crystal Thin Film on SI (100) Substrate by Mocvd

1996 ◽  
Vol 446 ◽  
Author(s):  
Hong Wang ◽  
S. X. Shang ◽  
X. J. Su ◽  
Z. Wang ◽  
M. Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Physical Properties ◽  
Single Crystal ◽  
Frequency Dependence ◽  
Buffer Layer ◽  
Loss Tangent ◽  
Constant E ◽  
Mocvd Technique

AbstractInsulating thin films of Bi2Ti2O7 with (111) orientation have been prepared on silicon (100)–substrates at a temperature range of 480–550 °C by a MOCVD technique. The dielectric and C‐V properties were studied. The dielectric constant (ɛ) and loss tangent (tanδ) were found to be 180 and 0.01, respectively. The temperature and frequency dependence of dielectric constant were also measured. The Bi2Ti2O7 films are suitable to be used as a novel buffer layer and new insulating gate material in FET devices.

Physical Properties of ZnSe Thin Films Depending on the Process Parameters

2013 ◽  
Vol 586 (1) ◽  
pp. 129-137 ◽  
Author(s):  
Maeng Jun Kim ◽  
Sung Ho Lee ◽  
Hong Tak Kim ◽  
Sang Ho Sohn
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Process Parameters ◽  
Znse Thin Films
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