Influence of the surrounding ambient on the reliability of the electrical characterization of thin oxide layers using an atomic force microscope

2011 ◽  
Vol 51 (12) ◽  
pp. 2097-2101 ◽  
Author(s):  
W. Hourani ◽  
B. Gautier ◽  
L. Militaru ◽  
D. Albertini ◽  
A. Descamps-Mandine ◽  
...  
2005 ◽  
Vol 87 (24) ◽  
pp. 243506 ◽  
Author(s):  
Fu-Chien Chiu ◽  
Shih-Kai Fan ◽  
Kwang-Cheng Tai ◽  
Joseph Ya-min Lee ◽  
Ya-Chang Chou

Author(s):  
Andre Striegler ◽  
Malgorzata Kopycinska-Mueller ◽  
Bernd Koehler ◽  
Klaus-Juergen Wolter ◽  
Norbert Meyendorf

Author(s):  
Kathleen M. Marr ◽  
Mary K. Lyon

Photosystem II (PSII) is different from all other reaction centers in that it splits water to evolve oxygen and hydrogen ions. This unique ability to evolve oxygen is partly due to three oxygen evolving polypeptides (OEPs) associated with the PSII complex. Freeze etching on grana derived insideout membranes revealed that the OEPs contribute to the observed tetrameric nature of the PSIl particle; when the OEPs are removed, a distinct dimer emerges. Thus, the surface of the PSII complex changes dramatically upon removal of these polypeptides. The atomic force microscope (AFM) is ideal for examining surface topography. The instrument provides a topographical view of individual PSII complexes, giving relatively high resolution three-dimensional information without image averaging techniques. In addition, the use of a fluid cell allows a biologically active sample to be maintained under fully hydrated and physiologically buffered conditions. The OEPs associated with PSII may be sequentially removed, thereby changing the surface of the complex by one polypeptide at a time.


Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.


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