A coupled, physics-based matrix-grain boundary model for creep of carbide strengthened nickel-based superalloys - II. Experimental results and model application

2020 ◽  
Vol 769 ◽  
pp. 138355 ◽  
Author(s):  
Daniel Spader ◽  
Michael Lapera ◽  
Hamouda Ghonem
Keyword(s):  
Grain Boundary ◽  
Experimental Results ◽  
Model Application ◽  
Boundary Model

Theoretical and experimental determinations of grain boundary structures and energies: Correlation with various experimental results

1972 ◽  
Vol 31 ◽  
pp. 115-137 ◽  
Author(s):  
G. Hasson ◽  
J.-Y. Boos ◽  
I. Herbeuval ◽  
M. Biscondi ◽  
C. Goux
Keyword(s):  
Grain Boundary ◽  
Experimental Results

Topological Stability of 2-D Vanishing Grains

1992 ◽  
Vol 278 ◽  
Author(s):  
V. E. Fradkov ◽  
M. E. Glicksman ◽  
J. Nordberg ◽  
M. Palmer ◽  
K. Rajan
Keyword(s):  
Computer Simulation ◽  
Grain Boundary ◽  
Grain Growth ◽  
Triple Junctions ◽  
Polycrystalline Films ◽  
Topological Stability ◽  
Von Neumann ◽  
Small Grains ◽  
The Mean ◽  
Boundary Model

AbstractGrain growth in polycrystals occurs by decreasing the total number of grains as a result of the disappearance of small ones. That is why the both the kinetic and topological details of shrinking of small grains are important.In 2-D, “uniform boundary model” assumptions imply the von Neumann-Mullins law, and all grains having less than 6 neighbors tend to shrink. The mean topological class ef vanishing grains was found experimentally to be about 4.3. This result suggests that most vanishing grains are either 4- or 5-sided, not transforming to 3-sided ones.Shrinking of 4- and 5-sided 2-D grains was studied experimentally on transparent, pure SCN, (succinonitrile) polycrystalline films and by direct computer simulation of grain boundary capillary motion together with triple junctions. It was found that the grains which are much smaller than their neighbors are topologically stable.

Hall studies on encapsulated CdSe films

1968 ◽  
Vol 46 (18) ◽  
pp. 1993-2000 ◽  
Author(s):  
D. E. Brodie ◽  
G. Yeh
Keyword(s):  
Grain Boundary ◽  
Carrier Concentration ◽  
Flat Band ◽  
Semiconductor Surface ◽  
Boundary Model

A technique for encapsulating CdSe films to obtain the flat band condition at the semiconductor surface is discussed and the results of Hall studies on suitably encapsulated films are presented. Results obtained with these films are consistent with a crystallite–grain-boundary model, where the mobility is limited by intercrystalline barriers, when the carrier concentration is not too large.

scholarly journals DC-Biased Properties of Powder Cores using a Nonmagnetic Grain Boundary Model

2010 ◽  
Vol 57 (9) ◽  
pp. 593-600 ◽  
Author(s):  
Susumu Handa ◽  
Yasuo Oshima ◽  
Kouta Akaiwa
Keyword(s):  
Grain Boundary ◽  
Boundary Model
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