Peculiarities of resistive switching in thin films of glassy SeTeSnGe system

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Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).


2010 ◽  
Vol 13 (12) ◽  
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Xin-Gui Tang ◽  
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Wen-Hua Li ◽  
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Kyung Min Kim ◽  
Byung Joon Choi ◽  
Yong Cheol Shin ◽  
Seol Choi ◽  
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Vol 126 (1) ◽  
pp. 117-124 ◽  
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Sergio Almeida ◽  
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Vol 104 (14) ◽  
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