Analysis of structural and electronic properties of NiTiZ (Z = Si, Ge, Sn and Sb) under high-pressure using ab initio calculations

2020 ◽  
Vol 25 ◽  
pp. 101613
Author(s):  
Aercio F.F. de F. Pereira ◽  
S. Michielon de Souza ◽  
Angsula Ghosh
1997 ◽  
Vol 55 (16) ◽  
pp. 10561-10570 ◽  
Author(s):  
Magdalena Sabisch ◽  
Peter Krüger ◽  
Johannes Pollmann

2009 ◽  
Vol 131 (22) ◽  
pp. 224312 ◽  
Author(s):  
Chakree Tanjaroon ◽  
Adam Daly ◽  
Adam J. V. Marwitz ◽  
Shih-Yuan Liu ◽  
Stephen Kukolich

2011 ◽  
Vol 519 (16) ◽  
pp. 5679-5683 ◽  
Author(s):  
S. Marsillac ◽  
N.S. Mangale ◽  
V. Gade ◽  
S.V. Khare

2004 ◽  
Vol 18 (07n08) ◽  
pp. 281-289 ◽  
Author(s):  
CHENG-BIN LI ◽  
MING-KAI LI ◽  
FU-QING LIU ◽  
XIANG-JUN FAN

The results of ab initio calculations of the bulk moduli (B0) and related structural and electronic properties of selected transition metals and their nitrides are presented. There is a correlation between B0 and valence charge density. B0 does not vary monotonically with the addition of d electrons. Charge density and density of states (DOS) plots enable us to explain it.


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