Temperature and frequency dependence of AC electrical conductivity, dielectric permittivities, modulus and impedance parts for thermally deposited Se80S20 thin film

The results of studying frequency and temperature dependences of AC electrical conductivity in FeGaInSe4 crystals are presented. It was found in the frequency interval f = 5 • 104−106 Hz, the regularity σ ∝ fS (0.1 ≤ s ≤ 1.0) holds for electrical conductivity. From the temperuture dependences the activation energies were determined. It is shown that in the FeGaInSe4 crystal, the frequency dependence of electrical conductivity can be explained using the multiplet model, which means that the conductivity in these crystals is characterized by a band-hop mechanism.

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Temperature and frequency dependence of dielectric relaxation and AC electrical conductivity in p-Si/CuPc hybrid photodiode

Applied Physics A ◽

10.1007/s00339-018-2006-6 ◽

2018 ◽

Vol 124 (9) ◽

Cited By ~ 5

Author(s):

M. M. Shehata ◽

K. Abdelhady

Keyword(s):

Electrical Conductivity ◽

Dielectric Relaxation ◽

Frequency Dependence ◽

Ac Electrical Conductivity

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Temperature and frequency dependence of dielectric characteristics, modulus spectroscopy and AC electrical conductivity in Erythrosine B thin films

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-04922-2 ◽

2021 ◽

Author(s):

E. F. M. El-Zaidia ◽

H. A. M. Ali

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Frequency Dependence ◽

Ac Electrical Conductivity ◽

Dielectric Characteristics ◽

Erythrosine B ◽

Modulus Spectroscopy

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Investigation of dielectric properties of heterostructures based on ZnO structures

Materials Science-Poland ◽

10.1515/msp-2017-0108 ◽

2018 ◽

Vol 35 (4) ◽

pp. 885-892

Author(s):

A.H. Selçuk ◽

E. Orhan ◽

S. Bilge Ocak ◽

A.B. Selçuk ◽

U. Gökmen

Keyword(s):

Electrical Conductivity ◽

Dielectric Constant ◽

Dielectric Properties ◽

Dielectric Loss ◽

Frequency Dependence ◽

Loss Tangent ◽

Electrical Modulus ◽

Ac Electrical Conductivity

Abstract The voltage and frequency dependence of dielectric constant є′, dielectric loss є″, electrical modulus M″, M′, loss tangent tanδ and AC electrical conductivity σAC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100kHz, 500 kHz and 1 MHz in this work. While the values of є′, є″, tanδ and σAC decreased, the values of M′ and M″ increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.

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Электропроводность монокристаллов FeIn-=SUB=-2-=/SUB=-Se-=SUB=-4-=/SUB=- на переменном токе

Физика и техника полупроводников ◽

10.21883/ftp.2018.06.45911.8588 ◽

2018 ◽

Vol 52 (6) ◽

pp. 535

Author(s):

Н.Н. Нифтиев ◽

Ф.М. Мамедов ◽

В.И. Гусейнов ◽

С.Ш. Курбанов

Keyword(s):

Electrical Conductivity ◽

Single Crystal ◽

Frequency Dependence ◽

Single Crystals ◽

Ac Electrical Conductivity ◽

Hopping Mechanism ◽

Temperature Range ◽

Temperature Dependences ◽

The Law

AbstractThe results obtained in a study of the frequency and temperature dependences of the ac electrical conductivity of FeIn_2Se_4 single crystals are presented. It is found that the law σ ~ f ^ S (0.1 ≤ S ≤ 1.0) is obeyed for electrical conductivity in the 295–375 K temperature range at frequencies of 2 × 10^4–10^6 Hz. It shown that the frequency dependence of the conductivity in an FeIn_2Se_4 single crystal can be accounted for in terms of the multiplet model, and, consequently, the conductivity in these single crystals is characterized by the band-hopping mechanism.

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