Investigating electrical properties of controllable graphene nanoribbon field effect transistors

2020 ◽  
Vol 583 ◽  
pp. 412022 ◽  
Author(s):  
Jianping Wang ◽  
Quan Wang
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon

New device structures for graphene nanoribbon field effect transistors

2016 ◽  
Vol 6 (3) ◽  
pp. 265-270 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Chong Wu Yi ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
New Device ◽  
Device Structures

Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

Plasmonics ◽  
2015 ◽  
Vol 11 (2) ◽  
pp. 573-577 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Alieh Hivechi ◽  
Fatemeh Tavakoli ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Breakdown Voltage ◽  
Edge Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Generation Rate

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

2018 ◽  
Vol 113 (6) ◽  
pp. 062103 ◽  
Author(s):  
Tae-Eon Bae ◽  
Kimihiko Kato ◽  
Ryota Suzuki ◽  
Ryosho Nakane ◽  
Mitsuru Takenaka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Impurity Concentration ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Field Effect Transistors

Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

2019 ◽  
Vol 481 ◽  
pp. 632-636 ◽  
Author(s):  
Yu Yang ◽  
Jiayan Yang ◽  
Wenlei Yin ◽  
Fanming Huang ◽  
Anyang Cui ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
P Type
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