Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2005.12.115 ◽

2006 ◽

Vol 32 (1-2) ◽

pp. 566-568 ◽

Author(s):

Kun-Ta Wu ◽

P.H. Chang ◽

S.T. Lien ◽

N.C. Chen ◽

Ching-An Chang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Electron Mobility Transistors ◽

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Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates

IEEE Transactions on Electron Devices ◽

10.1109/16.485533 ◽

1996 ◽

Vol 43 (4) ◽

pp. 527-534 ◽

Author(s):

T. Aigo ◽

M. Goto ◽

Y. Ohta ◽

A. Jono ◽

A. Tachikawa ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Electron Mobility Transistors

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Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers

Chinese Physics Letters ◽

10.1088/0256-307x/33/6/067301 ◽

2016 ◽

Vol 33 (6) ◽

pp. 067301 ◽

Author(s):

Jun Luo ◽

Sheng-Lei Zhao ◽

Zhi-Yu Lin ◽

Jin-Cheng Zhang ◽

Xiao-Hua Ma ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab07a2 ◽

2019 ◽

Vol 58 (SC) ◽

pp. SCCB11 ◽

Author(s):

Mei Wu ◽

Meng Zhang ◽

Qing Zhu ◽

Ling Yang ◽

Xiaohua Ma ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Resistance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Self Heating ◽

Electron Mobility Transistors ◽

Channel Resistance

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AlGaN/GaN High Electron Mobility Transistors with a p-Type GaN Cap Layer

ECS Meeting Abstracts ◽

10.1149/ma2018-01/23/1432 ◽

2018 ◽

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Cap Layer ◽

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Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5MeV protons

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.01.052 ◽

2011 ◽

Vol 326 (1) ◽

pp. 62-64 ◽

Author(s):

Hong-Yeol Kim ◽

Travis Anderson ◽

Michael A. Mastro ◽

Jaime A. Freitas ◽

Soohwan Jang ◽

...

Keyword(s):

Electron Mobility ◽

Electrical Characterization ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.020301 ◽

2015 ◽

Vol 54 (2) ◽

pp. 020301 ◽

Author(s):

Toshiharu Kubo ◽

Joseph J. Freedsman ◽

Yusuke Yoshida ◽

Takashi Egawa

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Electron Mobility Transistors ◽

Layer Deposition ◽

Current Voltage ◽

Current Voltage Characteristics

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Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

Journal of Applied Physics ◽

10.1063/1.3457356 ◽

2010 ◽

Vol 108 (1) ◽

pp. 013711 ◽

Author(s):

R. T. Green ◽

I. J. Luxmoore ◽

K. B. Lee ◽

P. A. Houston ◽

F. Ranalli ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances ◽

10.1063/1.4963740 ◽

2016 ◽

Vol 6 (9) ◽

pp. 095021 ◽

Author(s):

Bin Dong ◽

Jie Lin ◽

Ning Wang ◽

Ling-li Jiang ◽

Zong-dai Liu ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Temperature Transient ◽

Transient Capacitance

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