Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wells

2008 ◽  
Vol 40 (9) ◽  
pp. 2899-2903 ◽  
Author(s):  
S.B. Lev ◽  
V.I. Sugakov ◽  
G.V. Vertsimakha
2008 ◽  
Vol 47 (5) ◽  
pp. 3533-3536 ◽  
Author(s):  
Jiho Park ◽  
Akihiro Murayama ◽  
Izuru Souma ◽  
Yasuo Oka ◽  
Daniel Dangnelund ◽  
...  

2013 ◽  
Vol 115 (1) ◽  
pp. 99-104 ◽  
Author(s):  
K. Uchiyama ◽  
S. Kubota ◽  
T. Matsumoto ◽  
K. Kobayashi ◽  
H. Hori

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2739-2749
Author(s):  
A. A. TOROPOV ◽  
YA. V. TERENT'EV ◽  
A. V. LEBEDEV ◽  
P. S. KOP'EV ◽  
S. V. IVANOV ◽  
...  

We report on the spectroscopic magnetooptical studies of spin dynamics in diluted magnetic semiconductor (DMS) GaAs / AlGaAs / ZnSe / ZnCdMnSe heterovalent double quantum wells (QW). The transients of circularly polarized photoluminescence in an external magnetic field are detected in the structures with different widths of the GaAs QW. The analysis of the data, performed within the rate-equation model, has allowed separate estimations of the spin relaxation rate of localized electrons and holes. The spin flip of the electrons confined in the DMS ZnCdMnSe QW is faster than 20 ps, whereas the spin flip of the heavy hole localized in the GaAs QW is as long as ~9 ns. The long spin flip of the holes is presumably governed by their strong 3-dimensional localization.


1986 ◽  
Vol 89 ◽  
Author(s):  
Jacek Kossut ◽  
Jacek K. Furdyna

AbstractThe presence of transition metal ions (typically Mn2+) in diluted magnetic semiconductors (DMS) results in a strong spin-spin coupling between localized magnetic moments and band electrons. This leads to considerable modifications of the semiconductor band structure in the presence of strong magnetic fields, e.g., to large spin-dependent shifts of the electronic states at the band edge. This feature is of particular interest in the context of quantum wells involving DMS. Starting with the original idea of a “spin-superlattice”, we concentrate on various opportunities which arise due to the tunability of the depth of the quantum wells by the magnetic field and/or temperature associated with the aforementioned spindependent effects. Thus, we discuss boil-off and freeze-out of electrons to and from quantum wells, selective spin tunneling across the barriers, tunable infrared emitters, enhancement of electronic g-factors in shallow non-magnetic wells surrounded by DMS barriers, the possibility of transition from a type-1 to a type-il superlattice induced by the magnetic field, and quantum oscillations anomalies in DMS quantum wells.


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