Efficiency enhancement of CIGS solar cell by cubic silicon carbide as prospective buffer layer

Solar Energy ◽  
2021 ◽  
Vol 224 ◽  
pp. 271-278
Author(s):  
M.K. Sobayel ◽  
M.S. Chowdhury ◽  
T. Hossain ◽  
H.I. Alkhammash ◽  
S. Islam ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solar Cell ◽  
Buffer Layer ◽  
Efficiency Enhancement ◽  
Cigs Solar Cell ◽  
Cubic Silicon Carbide

Cubic Silicon Carbide (3C–SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell

2022 ◽  
Vol 123 ◽  
pp. 111911
Author(s):  
Jannatun Noor Sameera ◽  
Mohammad Aminul Islam ◽  
Saiful Islam ◽  
Tasnia Hossain ◽  
M.K. Sobayel ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solar Cell ◽  
Buffer Layer ◽  
High Efficiency ◽  
Cdte Solar Cell ◽  
Cubic Silicon Carbide

scholarly journals Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell

2021 ◽  
Author(s):  
Yuming Xue ◽  
Xinyu Wang ◽  
Liming Zhang ◽  
Shipeng Zhang ◽  
Lang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Buffer Layer ◽  
Chemical Bath Deposition ◽  
Deposition Rate ◽  
Lattice Mismatch ◽  
Solution Concentration ◽  
State Density ◽  
Cubic Phase ◽  
Cigs Solar Cell

Cd1-xZnxS thin films were deposited on glass substrates by chemical bath deposition (CBD). The effect of ZnSO4 solution concentration on the properties of the thin films was analyzed. The concentration of ZnSO4 solution affects the deposition rate of Cd1-xZnxS thin films. When the deposition rate is low, Cd1-xZnxS cubic crystal phase is formed. The surface morphology of hexagonal Cd1-xZnxS thin films is denser than that of cubic phase, the lattice mismatch rate of cubic phase Cd1-xZnxS thin films and CIGS is lower, only 0.56%, the interfacial state density is lower. SCAPS software was used to simulate the performance of the buffer layer, and the conversion efficiency of the cubic phase Cd1-xZnxS buffer layer in CIGS Solar Cell was up to 23.50%. Based on the EDS results, the function relationship between the contents of Zn2+ and Cd2+ in the films and the band gap content was deduced.

Application of a Sn4+ doped In2S3 thin film in a CIGS solar cell as a buffer layer

2020 ◽  
Vol 4 (1) ◽  
pp. 362-368 ◽  
Author(s):  
SeongYeon Kim ◽  
Md. Salahuddin Mina ◽  
Kiwhan Kim ◽  
Jihye Gwak ◽  
JunHo Kim
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Cigs Solar Cell ◽  
In2s3 Thin Film ◽  
Cigs Solar Cells

As a Cd-free buffer, In2S3 buffer has been used in Cu(In,Ga)Se2 (CIGS) solar cells.

scholarly journals Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

Data in Brief ◽  
2017 ◽  
Vol 14 ◽  
pp. 246-250 ◽  
Author(s):  
Md. Billal Hosen ◽  
Ali Newaz Bahar ◽  
Md. Karamot Ali ◽  
Md. Asaduzzaman,
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Buffer Layer ◽  
Cigs Solar Cell ◽  
And Performance

Efficiency enhancement of CIGS solar cell by WS2 as window layer through numerical modelling tool

Solar Energy ◽  
2020 ◽  
Vol 207 ◽  
pp. 479-485 ◽  
Author(s):  
K. Sobayel ◽  
M. Shahinuzzaman ◽  
N. Amin ◽  
M.R. Karim ◽  
M.A. Dar ◽  
...  
Keyword(s):  
Solar Cell ◽  
Numerical Modelling ◽  
Window Layer ◽  
Efficiency Enhancement ◽  
Cigs Solar Cell

scholarly journals CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe

2020 ◽  
Vol 233 ◽  
pp. 05004 ◽  
Author(s):  
Eduardo Ribeiro ◽  
Helena V. Alberto ◽  
Rui C. Vilão ◽  
João M. Gil ◽  
Alois Weidinger ◽  
...  
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Defect Layer ◽  
Buffer Layers ◽  
Cigs Solar Cell ◽  
Cell Material ◽  
Solar Cell Material

The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studied using implanted positive muons as a probe. A depth resolved analysis of the muon data suggests that both CdS and ZnSnO reduce the width of a defect layer present at the CIGS surface to about half its original value. Additionaly, CdS is able to reduce the intensity of the distur¬bance in the defected region, possibly due to a surface reconstrution in CIGS.

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