Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

2006 ◽  
Vol 496 (2) ◽  
pp. 546-554 ◽  
Author(s):  
J.C. Tinoco ◽  
M. Estrada ◽  
H. Baez ◽  
A. Cerdeira
Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.


2019 ◽  
Vol 16 (5) ◽  
pp. 19-26 ◽  
Author(s):  
Hemanth Jagannathan ◽  
Vijay Narayanan ◽  
Stephen Brown

1958 ◽  
Vol 36 (4) ◽  
pp. 456-461 ◽  
Author(s):  
M. P. Bachynski

The amount of incident energy transmitted, reflected, and absorbed by a parallel slab of lossy, high-dielectric-constant material is derived. The results are general for any angle of incidence, and calculations are presented for some lossy, high-dielectric-constant materials of one-half wavelength electrical thickness. At angles of incidence greater than 60°, the reflected energy is found to be the smaller the lossier the material. The absorbed energy is a maximum at certain angles of incidence which depend upon the polarization and dielectric constant.


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