scholarly journals Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

2008 ◽  
Vol 516 (23) ◽  
pp. 8447-8452 ◽  
Author(s):  
A. Redondo-Cubero ◽  
R. Gago ◽  
F. González-Posada ◽  
U. Kreissig ◽  
M.-A. di Forte Poisson ◽  
...  
1983 ◽  
Vol 27 ◽  
Author(s):  
E. N. Kaufmann ◽  
R. G. Musket ◽  
C.A. Colmenares ◽  
B. R. Appleton

ABSTRACTInitial studies of the oxidation resistance imparted to uranium metal through the implantation of Mo ions have shown that a significantly increased resistance can be achievedfor doses of 5 ×1016/cm2. No enhancement of oxidation resistance was found for doses below 1 ×1016/cm2. We report results of weight-gain measurements, ion-beam analysis, and x-ray diffraction, as well as observations of the way in which the protective implanted layer fails at long exposure times.


1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.


1995 ◽  
Vol 05 (04) ◽  
pp. 249-253
Author(s):  
R.J. UTUI ◽  
N.P.O. HOMMAN ◽  
K.G. MALMQVIST

A new Ion Beam Analysis (IBA) facility which was recently installed in the Department of Physics of the Eduardo Mondlane University of Maputo, Mozambique, is described. The set up is based on a low energy (500 keV) Van de Graaff proton accelerator and is intended to be used in particle induced X-ray emission (PIXE), Rutherford Backscattering (RBS) and nuclear reaction analysis (NRA). Preliminary experiments on beam diagnostics were performed successfully and the followed procedure is described.


2005 ◽  
Vol 15 (03n04) ◽  
pp. 249-255 ◽  
Author(s):  
W. J. TROMPETTER ◽  
A. MARKWITZ ◽  
P. DAVY

PIXE and Ion Beam Analysis are one of the few techniques that can be used to identify the elemental composition of air particulates without destroying the filter sample. They are key tools for identifying the sources and determining the relative contribution of biogenic and anthropogenic sources of air particulate matter pollution in our environment. Over the last 8 years, specialised equipment has been designed and built at the New Zealand Ion Beam Analysis facility in Lower Hutt for semi automated analysis of air filters. The equipment and experimental techniques have been refined to improve sensitivities for many of the elements in the periodic table. At GNS, sensitivities have recently been further improved by using two X-ray detectors simultaneously with different amounts of X-ray filtering and collimation. The average limit of detection is improved from 66 ng/cm2 (typical for a setup using a single detector) to 35 ng/cm2 using two detectors simultaneously. The New Zealand Ion Beam Analysis facility now routinely analyses air particulate matter collected on filters from several locations around New Zealand. In this paper, results of air particulate studies from several locations in the Wellington region are presented.


2018 ◽  
Vol 32 (34n36) ◽  
pp. 1840067 ◽  
Author(s):  
F. Fang ◽  
J. Rogers ◽  
P. P. Murmu ◽  
J. Kennedy

Copper oxide is a semiconducting compound with a narrow band gap and is used for photoconductive and photothermal applications. Most of the synthesis methods for the preparation of copper oxide composite materials either are unsuitable for mass fabrication or inevitably introduce unwanted impurities. In this work, we report on the synthesis of copper oxide composite materials by the arc discharge method with a pure copper rod as the anode and graphite as the cathode. Ion beam analysis techniques, particle-induced X-ray emission and Rutherford backscattering spectrometry were used to probe the impurities in the copper oxide composites. Ion beam analysis results revealed copper and oxygen as constituent elements with no impurities. X-ray diffraction results discovered the presence of CuO, Cu2O and Cu phases in the composite materials. The morphology of the as-synthesized copper oxide was studied by scanning electron microscopy. Results clearly demonstrated that spherical particles were obtained with an average diameter of 14 [Formula: see text]m (range 2–85 [Formula: see text]m), 35 [Formula: see text]m (range 20–100 [Formula: see text]m) and 50 [Formula: see text]m (range 30–120 [Formula: see text]m) for the arc current of 60 A, 80 A and 95 A, respectively. It was found that the morphology can be controlled by the arc discharge parameters, e.g. a lower arc discharge current contributed to a smaller particle size. This is because the electric arc current influences the nucleation and the growth of the spherical structures. Due to its simplicity of synthesis, the proposed arc discharge is a promising technique for the fabrication of copper oxide composite materials for optical and electrical applications.


2010 ◽  
Vol 82 (17) ◽  
pp. 7309-7318 ◽  
Author(s):  
Bilal Nsouli ◽  
Alice Bejjani ◽  
Serge Della Negra ◽  
Alain Gardon ◽  
Jean-Paul Thomas

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