Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge

2015 ◽  
Vol 596 ◽  
pp. 24-28 ◽  
Author(s):  
Tomoaki Terasako ◽  
Junichi Nomoto ◽  
Hisao Makino ◽  
Naoki Yamamoto ◽  
Sho Shirakata ◽  
...  
Keyword(s):  
Structural Properties ◽  
Gas Flow ◽  
Arc Discharge ◽  
Zno Films ◽  
Flow Rates ◽  
Ion Plating ◽  
Oxygen Gas ◽  
Doped Zno ◽  
Dc Arc

Temperature dependence of electrical properties of Ga-doped ZnO films deposited by ion plating with DC arc discharge

2013 ◽  
Vol 528 ◽  
pp. 19-25 ◽  
Author(s):  
T. Terasako ◽  
H. Song ◽  
H. Makino ◽  
S. Shirakata ◽  
T. Yamamoto
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Arc Discharge ◽  
Zno Films ◽  
Ion Plating ◽  
Doped Zno ◽  
Dc Arc

scholarly journals Influence of Argon/oxygen Ratio on Linear and Nonlinear Optical Properties of Copper Doped ZnO Films

2019 ◽  
Vol 26 (2) ◽  
pp. 121-126
Author(s):  
Xing WEN ◽  
Yue HAN ◽  
Cheng-Bao YAO ◽  
Ke-Xin ZHANG ◽  
Jin LI ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonlinear Absorption ◽  
Gas Flow ◽  
Hexagonal Wurtzite Structure ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flow Rates ◽  
Doped Zno ◽  
Diffraction Patterns ◽  
Oxygen Ratio

Copper (Cu)-doped ZnO (CZO) films were grown by simultaneous direct current and radio frequency magnetron sputtering technique under the situation of different gas flow rates of Ar: O2 (1:1, 2:1 and 1:0). The X-ray diffraction patterns revealed the naturally polycrystalline ZnO films with the predominant reflection (002) peak, which referred to the hexagonal wurtzite structure toward c-axis. The elemental composition of thin films was analyzed by energy dispersive spectroscopy (EDS). The Cu concentrations in thin films increased with Ar ratio of up to 1:0. The EDS spectra of three kinds of elements indicate that Cu-doping has obvious and sophisticated effect on the chemical state of oxygen, but less effect on those of copper and zinc. Furthermore, the nonlinear absorption of CZO films was investigated by the way of Z-scan technique. These films demonstrated good nonlinear absorption behavior for the different gas flow rates of Ar: O2.

Effect of thermal annealing on electrical properties of transparent conductive Ga-doped ZnO films prepared by ion-plating using direct-current arc discharge

2009 ◽  
Vol 517 (10) ◽  
pp. 3134-3137 ◽  
Author(s):  
Takahiro Yamada ◽  
Aki Miyake ◽  
Hisao Makino ◽  
Naoki Yamamoto ◽  
Tetsuya Yamamoto
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Direct Current ◽  
Arc Discharge ◽  
Zno Films ◽  
Ion Plating ◽  
Doped Zno

scholarly journals Carbon monoxide gas sensing properties of Ga-doped ZnO film grown by ion plating with DC arc discharge

2014 ◽  
Vol 3 (2) ◽  
pp. 331-334 ◽  
Author(s):  
S. Kishimoto ◽  
S. Akamatsu ◽  
H. Song ◽  
J. Nomoto ◽  
H. Makino ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Gas Sensing ◽  
Arc Discharge ◽  
Zno Films ◽  
Nitrogen Gas ◽  
Sensing Properties ◽  
Ion Plating ◽  
Gas Sensing Properties ◽  
Doped Zno ◽  
Co Gas

Abstract. The carbon monoxide (CO) gas sensing properties of low-resistance heavily Ga-doped ZnO thin films were evaluated. The ZnO films with a thickness of 50 nm were deposited at 200 °C by ion plating. The electrical properties of the ZnO films were controlled by varying the oxygen assist gas flow rate during deposition. The CO gas sensitivity of ZnO films with Au electrodes was investigated in nitrogen gas at a temperature of 230 to 330 °C. CO gas concentration was varied in the range of 0.6–2.4% in nitrogen gas. Upon exposure to CO gas, the current flowing through the film was found to decrease. This response occurred even at the lowest temperature of 230 °C, and is thought to be the result of a mechanism different than the previously reported chemical reaction.

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