Photoluminescence and field-emission characteristics of ZnO nanowires synthesized by two-step method

Vacuum ◽  
2007 ◽  
Vol 82 (1) ◽  
pp. 30-34 ◽  
Author(s):  
Qiuxiang Zhang ◽  
Yongsheng Zhang ◽  
Ke Yu ◽  
Ziqiang Zhu
2011 ◽  
Vol 110-116 ◽  
pp. 1918-1922 ◽  
Author(s):  
Yong Ai Zhang ◽  
Jin Yang Lin ◽  
Chao Xing Wu ◽  
Tai Liang Guo

Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/µm at current density of 10µA/cm2 and its the threshold field at current density of 1mA/cm2 is about 6.56 V/µm at an emitter-anode gap of 400µm. and the fluctuation of FE current density is smaller than 10% for 3.5h at electric field of 6V/µm. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.


2013 ◽  
Vol 231 ◽  
pp. 423-427 ◽  
Author(s):  
Jyh-Liang Wang ◽  
Tsang-Yen Hsieh ◽  
Po-Yu Yang ◽  
Chuan-Chou Hwang ◽  
Der-Chi Shye ◽  
...  

2012 ◽  
Vol 33 (2) ◽  
pp. 023001 ◽  
Author(s):  
Yongai Zhang ◽  
Chaoxing Wu ◽  
Yong Zheng ◽  
Tailiang Guo

2011 ◽  
Vol 49 (4) ◽  
pp. 342-347
Author(s):  
Kyoungwan Park ◽  
Seungman An ◽  
Taekyung Yim ◽  
Kyungsu Lee ◽  
Jeongho Kim ◽  
...  

2008 ◽  
Vol 403 (10-11) ◽  
pp. 1793-1796 ◽  
Author(s):  
Wenhui Lu ◽  
Hang Song ◽  
Yixin Jin ◽  
Hui Zhao ◽  
Haifeng Zhao ◽  
...  

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