Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy

1996 ◽  
Vol 169 (4) ◽  
pp. 613-620 ◽  
Author(s):  
Y. Hayakawa ◽  
S. Iida ◽  
T. Sakurai ◽  
H. Yanagida ◽  
M. Kikuzawa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Gaas Substrates

Mask-Induced Strain in Gaas Layers Grown by Liquid Phase Epitaxial Lateral Overgrowth

1999 ◽  
Vol 570 ◽  
Author(s):  
Z.R. Zytkiewicz ◽  
J. Domagala ◽  
D. Dobosz
Keyword(s):  
Liquid Phase ◽  
Epitaxial Lateral Overgrowth ◽  
X Ray Diffraction ◽  
Liquid Phase Epitaxial ◽  
X Ray ◽  
Vertical Strain ◽  
Lateral Overgrowth ◽  
Gaas Substrates ◽  
Show Evidence ◽  
Vertical Growth Rate

ABSTRACTX-ray diffraction has been used to study the mask-induced strain in GaAs layers grown by the liquid phase epitaxial lateral overgrowth (ELO) on (100) GaAs substrates. SiO2 mask has been investigated to produce seeding areas for the ELO growth. It has been found that SiO2 attracts the ELO layers, which leads to their pronounced bending towards the oxide film and to the appearance of vertical strain in laterally grown parts of ELO. When SiO2 is removed by selective etching this strain disappears. We show evidence that the bending of ELO layers is reduced when the density of substrate dislocations is increased. This is explained as being due to enhancement of the initial vertical growth rate by dislocations supplying steps on the upper surface of ELO.

Lattice-mismatched InGaP/GaAs (111)B liquid phase epitaxy with epitaxial lateral overgrowth

2009 ◽  
Vol 311 (3) ◽  
pp. 842-846 ◽  
Author(s):  
S. Hayashi ◽  
M. Nangu ◽  
T. Morikuni ◽  
S. Owa ◽  
N.S. Takahashi
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth
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