GAP-State distribution in Ge25Se75-xBix sputtered films by phase shift analysis of modulated photocurrents

1991 ◽  
Vol 137-138 ◽  
pp. 955-958 ◽  
Author(s):  
P. Kounavis ◽  
E. Mytilineou
1975 ◽  
Vol 38 (9) ◽  
pp. 1099-1141 ◽  
Author(s):  
J E Bowcock ◽  
H Burkhardt

1970 ◽  
Vol 20 (2) ◽  
pp. 301-319 ◽  
Author(s):  
G. Giacomelli ◽  
P. Lugaresi-Serra ◽  
G. Mandrioli ◽  
A.M. Rossi ◽  
F. Griffiths ◽  
...  

1973 ◽  
Vol 44 (1) ◽  
pp. 1-4 ◽  
Author(s):  
R. Vinh Mau ◽  
J.M. Richard ◽  
B. Loiseau ◽  
M. Lacombe ◽  
W.N. Cottingham

1963 ◽  
Vol 129 (5) ◽  
pp. 2311-2322 ◽  
Author(s):  
Olav T. Vik ◽  
Hugo R. Rugge

2005 ◽  
Vol 20 (08n09) ◽  
pp. 1818-1821
Author(s):  
J. BREITSCHOPF ◽  
M. BAUER ◽  
H. CLEMENT ◽  
M. CRÖNI ◽  
H. DENZ ◽  
...  

Total cross sections of the single charge exchange reaction π-p→π0n have been measured at PSI from about 40 to 250 MeV using a transmission technique. Preliminary results show an excellent agreement with predictions from the SAID FA02 phase shift analysis for energies above 70 MeV.


1973 ◽  
Vol 64 ◽  
pp. 134-162 ◽  
Author(s):  
B. Hyams ◽  
C. Jones ◽  
P. Weilhammer ◽  
W. Blum ◽  
H. Dietl ◽  
...  

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