Study of the stability of hydrogenated amorphous silicon using tight-binding molecular dynamics

1998 ◽  
Vol 240 (1-3) ◽  
pp. 29-34 ◽  
Author(s):  
Runyu Yang ◽  
Jai Singh
Keyword(s):  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Tight Binding ◽  
Hydrogenated Amorphous Silicon ◽  
The Stability ◽  
Hydrogenated Amorphous

Reactivity and Migration of Hydrogen in A-SI:H

1997 ◽  
Vol 467 ◽  
Author(s):  
R. Biswas ◽  
Qiming Li ◽  
B. C. Pan ◽  
Y. Yoon
Keyword(s):  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Hydrogen Diffusion ◽  
Tight Binding ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bond ◽  
Molecular Dynamics Calculations ◽  
And Migration ◽  
Hydrogenated Amorphous

ABSTRACTTight-binding molecular dynamics calculations reveal a new mechanism for hydrogen diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicon and breaking their Si-Si bonds. The diffusing hydrogen carries with it a newly created dangling bond. These intermediate transporting states are densely populated in the network and have lower energies than H at the center of stretched Si-Si bonds.

Light-Induced Metastable Defects in a-Si:H: Towards an Understanding

1985 ◽  
Vol 49 ◽  
Author(s):  
Martin Stutzmann ◽  
Warren B. Jackson ◽  
Chuang Chuang Tsai
Keyword(s):  
Amorphous Silicon ◽  
Mechanical Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Material Parameters ◽  
Kinetic Behaviour ◽  
Proposed Model ◽  
Special Cases ◽  
The Stability ◽  
Hydrogenated Amorphous

AbstractThe dependence of the creation and the annealing of metastable dangling bonds in hydrogenated amorphous silicon on various material parameters will be discussed in the context of a recently proposed model. After a brief review of the kinetic behaviour governing defect creation and annealing in undoped a- Si:H, a number of special cases will be analyzed: the influence of alloying with O, N, C, and Ge, changes introduced by doping and compensation, and the role of mechanical stress. Finally, possibilities to increase the stability of a-Si:H based devices will be examined.

Computer-Generated Structural Models for a-Si:H

1988 ◽  
Vol 141 ◽  
Author(s):  
Laurent J. Lewis ◽  
Normand Mousseau ◽  
FranÇois Drolet
Keyword(s):  
Molecular Dynamics ◽  
Boundary Conditions ◽  
Amorphous Silicon ◽  
Periodic Boundary ◽  
Hydrogenated Amorphous Silicon ◽  
Structural Models ◽  
Periodic Boundary Conditions ◽  
Dynamics Simulations ◽  
Hydrogenated Amorphous ◽  
Good Agreement

AbstractA new algorithm for generating fully-coordinated hydrogenated amorphous silicon models with periodic boundary conditions is presented. The hydrogen is incorporated into an a-Si matrix by a bond-switching process similar to that proposed by Wooten, Winer, and Weaire, making sure that four-fold coordination is preserved and that no rings with less than 5 members are created. After each addition of hydrogen, the structure is fully relaxed. The models so obtained, to be used as input to molecular dynamics simulations, are found to be in good agreement with experiment. A model with 12 at.% H is discussed in detail.

Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates

1995 ◽  
Vol 78 (1) ◽  
pp. 317-320 ◽  
Author(s):  
J. P. Kleider ◽  
C. Longeaud ◽  
M. Barranco‐Diaz ◽  
P. Morin ◽  
P. Roca i Cabarrocas
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Stability ◽  
Hydrogenated Amorphous

Fast light-induced change in ellipsometry spectra of hydrogenated amorphous silicon measured through a transparent substrate upon bias light illumination

2001 ◽  
Vol 664 ◽  
Author(s):  
N. Hata ◽  
C. M. Fortmann ◽  
A. Matsuda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Light Illumination ◽  
Temperature Dependent ◽  
Transparent Substrate ◽  
Optical Effects ◽  
The Stability ◽  
Fast Light ◽  
First Time ◽  
Hydrogenated Amorphous

ABSTRACTPrevious ellipsometric studies of the stability of amorphous silicon (a-Si:H) found reversible changes in the pseudo-dielectric functions. These changes were slow to generate and slow to anneal away. These slow changes are associated with a dangling bond related structural change. Since any light-induced change in the dielectric function is useful for photonic engineering, we undertook the present more detailed study of light induced optical effects in a-Si:H. The optical pseudo-dielectric functions of hydrogenated amorphous silicon (a-Si:H) were measured using spectroscopic ellipsometry (SE) and the “through-the-substrate” measurement technique as a function of measurement temperature and bias light illumination. For the first time we report a light-induced change in a-Si:H materials that is fast, bias-light-dependent, reversible, and temperature dependent. This effect, while not completely understood, offers exciting new prospects for photonic engineering.

Effect of Cl incorporation on the stability of hydrogenated amorphous silicon

1995 ◽  
Vol 67 (25) ◽  
pp. 3786-3788 ◽  
Author(s):  
Jae Seong Byun ◽  
Hong Bin Jeon ◽  
Kyung Ha Lee ◽  
Jin Jang
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
The Stability ◽  
Hydrogenated Amorphous
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