Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure

2002 ◽  
Vol 46 (8) ◽  
pp. 1123-1126 ◽  
Author(s):  
Chii-Chang Chen ◽  
Kun-Long Hsieh ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi ◽  
...  
2001 ◽  
Vol 89 (10) ◽  
pp. 5465-5468 ◽  
Author(s):  
Chii-Chang Chen ◽  
Kun-Long Hsieh ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi ◽  
...  

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.


2000 ◽  
Vol 77 (23) ◽  
pp. 3758-3760 ◽  
Author(s):  
Chii-Chang Chen ◽  
Hui-Wen Chuang ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi

2021 ◽  
Vol 602 ◽  
pp. 412487
Author(s):  
M. Gunes ◽  
O. Donmez ◽  
C. Gumus ◽  
A. Erol ◽  
H. Alghamdi ◽  
...  

1996 ◽  
Vol 69 (23) ◽  
pp. 3572-3574 ◽  
Author(s):  
M. Momose ◽  
A. Taike ◽  
M. Kawata ◽  
J. Gotoh ◽  
S. Nakatsuka

2010 ◽  
Vol 530 (1) ◽  
pp. 131/[287]-136/[292]
Author(s):  
Jung Soo Park ◽  
Tae Jin Park ◽  
Woo Sik Jeon ◽  
Gyeong Heon Kim ◽  
Jae Hyung Yu ◽  
...  

1990 ◽  
Vol 8 (4) ◽  
pp. 433-437 ◽  
Author(s):  
A. Hameury ◽  
G. Chassaing ◽  
M. Sigrist ◽  
C. Deparis ◽  
J. Massies

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