A study of thin film Au–Al alloy oxidation in ambient air by X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge structure (XANES), and secondary ion mass spectrometry (SIMS)

2002 ◽  
Vol 187 (3-4) ◽  
pp. 266-274 ◽  
Author(s):  
H. Piao ◽  
M. Suominen Fuller ◽  
D. Miller ◽  
N.S. McIntyre
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Ambient Air ◽  
Al Alloy ◽  
Edge Structure ◽  
X Ray ◽  
Alloy Oxidation ◽  
X Ray Absorption ◽  
Secondary Ion

Interaction of Bovine Serum Albumin and Lysozyme with Stainless Steel Studied by Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy

Langmuir ◽  
2012 ◽  
Vol 28 (47) ◽  
pp. 16306-16317 ◽  
Author(s):  
Yolanda S. Hedberg ◽  
Manuela S. Killian ◽  
Eva Blomberg ◽  
Sannakaisa Virtanen ◽  
Patrik Schmuki ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Stainless Steel ◽  
Bovine Serum Albumin ◽  
Serum Albumin ◽  
Photoelectron Spectroscopy ◽  
Bovine Serum ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
X Ray ◽  
Secondary Ion

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol

2021 ◽  
Vol 314 ◽  
pp. 23-28
Author(s):  
Seungjun Oh ◽  
Sunyoung Lee ◽  
Heehwan Kim ◽  
Donggeon Kwak ◽  
Chulwoo Bae ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Isopropyl Alcohol ◽  
Secondary Ion Mass Spectrometry ◽  
Oxidation Reactions ◽  
X Ray ◽  
Technological Control ◽  
Technological Developments ◽  
Ultra Trace ◽  
Ethylene Tetrafluoroethylene ◽  
Secondary Ion

Technological control over ultra-trace level contaminants is important for semiconductor development. Despite technological developments, defects remain in the single wafer wet cleaning process. In this paper, the source of the contamination is explained via trace analytical methods. Fluorine resin materials of polytetrafluoroethylene (PTFE) and ethylene tetrafluoroethylene (ETFE) are commonly used in semiconductor equipment. Isopropyl alcohol (IPA) oxidation reactions occur at high temperature below the boiling point due to impurities. IPA changed to different alcohol forms from gas chromatography (GCMS) analysis. The oxygen concentration in the X-ray photoelectron spectroscopy (XPS) results increased and formed new bonds in IPA with fluorine resin. These reactions confirmed that cations were a catalyst from the time-of-flight secondary ion mass spectrometry (TOF-SIMS) results. Representative ions were Fe+, K+, and Na+ with different concentrations for each material.

Landscape of s-triazine molecule on Si(100) by a theoretical x-ray photoelectron spectroscopy and x-ray absorption near-edge structure spectra study

2018 ◽  
Vol 27 (11) ◽  
pp. 113101
Author(s):  
Jing Hu ◽  
Xiu-Neng Song ◽  
Sheng-Yu Wang ◽  
Juan Lin ◽  
Jun-Rong Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Edge Structure ◽  
X Ray ◽  
X Ray Absorption
Sign in / Sign up

Export Citation Format

Share Document