Low energy dual beam depth profiling: influence of sputter and analysis beam parameters on profile performance using TOF-SIMS

2003 ◽  
Vol 203-204 ◽  
pp. 277-280 ◽  
Author(s):  
T. Grehl ◽  
R. Möllers ◽  
E. Niehuis
2013 ◽  
Vol 45 (8) ◽  
pp. 1261-1265 ◽  
Author(s):  
Atsushi Murase ◽  
Takuya Mitsuoka ◽  
Mitsuhiro Tomita ◽  
Hisataka Takenaka ◽  
Hiromi Morita

2004 ◽  
Vol 231-232 ◽  
pp. 749-753 ◽  
Author(s):  
J. Brison ◽  
T. Conard ◽  
W. Vandervorst ◽  
L. Houssiau

2002 ◽  
Vol 8 (3) ◽  
pp. 216-226 ◽  
Author(s):  
Geert Verlinden ◽  
Renaat Gijbels ◽  
Ingrid Geuens

The technique of imaging time-of-flight secondary ion mass spectrometry (TOF-SIMS) and dual beam depth profiling has been used to study the composition of the surface of tabular silver halide microcrystals. Analysis of individual microcrystals with a size well below 1 μm from a given emulsion is possible. The method is successfully applied for the characterization of silver halide microcrystals with subpercent global iodide concentrations confined in surface layers with a thickness below 5 nm. The developed TOF-SIMS analytical procedure is explicitly demonstrated for the molecular imaging of adsorbed thiocyanate layers (SCN) at crystal surfaces of individual crystals and for the differentiation of iodide conversion layers synthesized with KI and with AgI micrates (nanocrystals with a size between 10 and 50 nm). It can be concluded that TOF-SIMS as a microanalytical, surface-sensitive technique has some unique properties over other analytical techniques for the study of complex structured surface layers of silver halide microcrystals. This offers valuable information to support the synthesis of future photographic emulsions.


2012 ◽  
Vol 45 (1) ◽  
pp. 171-174 ◽  
Author(s):  
D. Rading ◽  
R. Moellers ◽  
H.-G. Cramer ◽  
E. Niehuis

2010 ◽  
Vol 43 (1-2) ◽  
pp. 198-200 ◽  
Author(s):  
D. Rading ◽  
R. Moellers ◽  
F. Kollmer ◽  
W. Paul ◽  
E. Niehuis

2013 ◽  
Vol 27 (24) ◽  
pp. 2828-2832 ◽  
Author(s):  
S. V. Baryshev ◽  
N. G. Becker ◽  
A. V. Zinovev ◽  
C. E. Tripa ◽  
I. V. Veryovkin

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