Influence of sputtering conditions on the structure and properties of Ti–Si–N thin films prepared by r.f.-reactive sputtering

2003 ◽  
Vol 174-175 ◽  
pp. 261-265 ◽  
Author(s):  
M. Nose ◽  
Y. Deguchi ◽  
T. Mae ◽  
E. Honbo ◽  
T. Nagae ◽  
...  
Shinku ◽  
1974 ◽  
Vol 17 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Hiroharu HIRABAYASHI ◽  
Minoru NOGAMI

1990 ◽  
Vol 5 (4) ◽  
pp. 677-679 ◽  
Author(s):  
A. J. Drehman ◽  
M. W. Dumais

Y-Ba-Cu-O films were made by R-F diode sputtering using a single oxide target. It was found that if a small negative bias is applied to the substrate, the etching associated with reactive sputtering is significantly reduced. This results in better composition control and uniformity, which are quite important for the formation of superconducting thin films. Films deposited on strontium titanate, when annealed in oxygen, become superconducting with zero resistance at 89 K.


2008 ◽  
Vol 354 (19-25) ◽  
pp. 2853-2857 ◽  
Author(s):  
Maria M. Giangregorio ◽  
Alberto Sacchetti ◽  
Maria Losurdo ◽  
Pio Capezzuto ◽  
Giovanni Bruno

2012 ◽  
Vol 520 (16) ◽  
pp. 5137-5140 ◽  
Author(s):  
Ning Li ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Kyung Ho Kim ◽  
Tsutomu Suzuki

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