Novel high-pressure crystallization process for the preparation of electronic ceramic thin films at low temperatures

Ceramic thin films and coatings are of interest for electrical, optical, magnetic and thermal barrier applications. Critical for improved properties in thin films is the development of specific microstructures during processing. To this end, the sol-gel method is advantageous as a versatile processing route. The sol-gel process involves depositing a solution containing metalorganic or colloidal ceramic precursors onto a substrate and heating the deposited layer to form a crystalline or non-crystalline ceramic coating. This route has several advantages, including the ability to create tailored microstructures and properties, to coat large or small areas, simple or complex shapes, and to more easily prepare multicomponent ceramics. Sol-gel derived coatings are amorphous in the as-deposited state and develop their crystalline structure and microstructure during heat-treatment. We are particularly interested in studying the amorphous to crystalline transformation, because many key features of the microstructure such as grain size and grain size distribution may be linked to this transformation.

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ANOMALOUS MAGNETIZATION PROCESSES AT LOW TEMPERATURES IN COMPOSITIONALLY MODULATED Co/Mn THIN FILMS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19888798 ◽

1988 ◽

Vol 49 (C8) ◽

pp. C8-1753-C8-1754

Author(s):

H. Sakakima ◽

M. Tessier ◽

R. Krishnan ◽

E. Hirota

Keyword(s):

Thin Films ◽

Low Temperatures ◽

Magnetization Processes

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970 nm Infrared to Visible Upconversion in Er3+ and Yb3+ Co-Doped PLZT Glass Ceramic Thin Films

10.1557/proc-1111-d04-03 ◽

2008 ◽

Author(s):

Xiaomei Guo ◽

Kewen Kevin. Li ◽

Xuesheng Chen ◽

Yingyin Kevin. Zou ◽

Hua Jiang

Keyword(s):

Thin Films ◽

Glass Ceramic ◽

Ceramic Thin Films ◽

Co Doped

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High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽

10.3390/coatings11060724 ◽

2021 ◽

Vol 11 (6) ◽

pp. 724

Author(s):

Sara Massardo ◽

Alessandro Cingolani ◽

Cristina Artini

Keyword(s):

Thin Films ◽

High Pressure ◽

Rare Earth ◽

Ionic Conductivity ◽

Bulk Material ◽

Threshold Temperature ◽

Doped Ceria ◽

X Ray Diffraction ◽

X Ray ◽

Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

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