Single crystal growth of transition metal oxides at high pressures of several GPa

2003 ◽  
Vol 392-396 ◽  
pp. 22-28 ◽  
Author(s):  
M. Azuma ◽  
T. Saito ◽  
S. Ishiwata ◽  
I. Yamada ◽  
Y. Kohsaka ◽  
...  
2002 ◽  
Vol 14 (44) ◽  
pp. 11321-11324 ◽  
Author(s):  
Masaki Azuma ◽  
Takashi Saito ◽  
Shintaro Ishiwata ◽  
Hirofumi Yoshida ◽  
Mikio Takano ◽  
...  

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
F. Freund ◽  
S. C. Williams ◽  
R. D. Johnson ◽  
R. Coldea ◽  
P. Gegenwart ◽  
...  

2021 ◽  
pp. 2006601
Author(s):  
Soo Ho Choi ◽  
Hyung‐Jin Kim ◽  
Bumsub Song ◽  
Yong In Kim ◽  
Gyeongtak Han ◽  
...  

1989 ◽  
Vol 156 ◽  
Author(s):  
Aaron Wold ◽  
Kirby Dwight

ABSTRACTThe structure-property relationships of several conducting transition metal oxides, as well as their preparative methods, are presented in this paper. The importance of preparing homogeneous phases with precisely known stoichiometry is emphasized. A comparison is also made of the various techniques used to prepare both polycrystalline and single crystal samples. For transition metal oxides, the metallic properties are discussed either in terms of metal-metal distances which are short enough to result in metallic behavior, or in terms of the formation of a П* conduction band resulting from covalent metal-oxygen interactions. Metallic behavior is observed when the conduction bands are populated with either electrons or holes. The concentration of these carriers can be affected by either cation or anion substitutions. The discussion in this presentation will be limited to the elements Re, Ti, V, Cr, Mo, and Cu.


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