Near-edge X-ray absorption fine structure spectroscopy of arcjet-deposited cubic boron nitride

1997 ◽  
Vol 6 (12) ◽  
pp. 1883-1886 ◽  
Author(s):  
D.H. Berns ◽  
M.A. Cappelli ◽  
D.K. Shuh
2005 ◽  
Vol 7 (6) ◽  
pp. 1103 ◽  
Author(s):  
Tirandai Hemraj-Benny ◽  
Sarbajit BanerjeeCurrent address: Department ◽  
Sharadha Sambasivan ◽  
Daniel A. Fischer ◽  
Weiqiang Han ◽  
...  

1994 ◽  
Vol 12 (4) ◽  
pp. 2462-2466 ◽  
Author(s):  
L. J. Terminello ◽  
A. Chaiken ◽  
D. A. Lapiano‐Smith ◽  
G. L. Doll ◽  
T. Sato

1996 ◽  
Vol 437 ◽  
Author(s):  
A.F. Jankowski ◽  
I. Jimenez ◽  
J.P. Hayes ◽  
D.K. Shuh ◽  
W.M. Tong ◽  
...  

AbstractNear-edge x-ray absorption fine structure (NEXAFS) is used to examine the chemical bonding in boron and boron-nitride films sputter deposited from a fully-dense, pure boron target. Reactive sputtering is used to prepare the boron-nitride and multilayered films. Although the process of sputter deposition often produces films that lack long range order, NEXAFS reveals the distinguishing features of sp2 and sp3 hybridization that are associated with different crystalline structures. The sensitivity of NEXAFS to local order further provides details in bonding modifications that exist in these films.


2000 ◽  
Vol 454-456 ◽  
pp. 723-728 ◽  
Author(s):  
H. Magnan ◽  
P. Le Fèvre ◽  
A. Midoir ◽  
D. Chandesris ◽  
H. Jaffrès ◽  
...  

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