Effect of target materials on crystalline carbon nitride film preparation by ion beam sputtering

1999 ◽  
Vol 8 (8-9) ◽  
pp. 1724-1729 ◽  
Author(s):  
C.T. Kuo ◽  
L.C. Chen ◽  
K.H. Chen ◽  
T.M. Chen ◽  
T.R. Lu
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Nitride Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Carbon Nitride Film ◽  
Film Preparation

The use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogen

1998 ◽  
Vol 72 (26) ◽  
pp. 3449-3451 ◽  
Author(s):  
L. C. Chen ◽  
T. R. Lu ◽  
C. T. Kuo ◽  
D. M. Bhusari ◽  
J. J. Wu ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Film Deposition ◽  
Nitride Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Carbon Nitride Film

Nitride film deposition by reactive ion beam sputtering

1980 ◽  
Vol 65 (2) ◽  
pp. 233-245 ◽  
Author(s):  
H.-J. Erler ◽  
G. Reisse ◽  
C. Weissmantel
Keyword(s):  
Ion Beam ◽  
Film Deposition ◽  
Nitride Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

1999 ◽  
Vol 592 ◽  
Author(s):  
L. C. Chen ◽  
C. T. Wu ◽  
C.-Y Wen ◽  
J.-J. Wu ◽  
W. T. Liu ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Interface Roughness ◽  
Electrical Characteristics ◽  
Ion Beam Sputtering ◽  
Electrical Measurements ◽  
Sputtering Deposition ◽  
Silicon Carbon ◽  
Beam Sputtering ◽  
Silicon Carbon Nitride

ABSTRACTDielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

Deposition of silicon carbon nitride films by ion beam sputtering

1999 ◽  
Vol 355-356 ◽  
pp. 417-422 ◽  
Author(s):  
J.-J Wu ◽  
C.-T Wu ◽  
Y.-C Liao ◽  
T.-R Lu ◽  
L.C Chen ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Silicon Carbon ◽  
Beam Sputtering ◽  
Silicon Carbon Nitride

Carbon nitride films synthesized by dual ion beam sputtering

1997 ◽  
Vol 122 (3) ◽  
pp. 534-537 ◽  
Author(s):  
P. Prieto ◽  
C. Quirós ◽  
E. Elizalde ◽  
A. Fernandez ◽  
J.M. Martin ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Characterization of carbon nitride thin films prepared by dual ion beam sputtering

1996 ◽  
Vol 69 (6) ◽  
pp. 764-766 ◽  
Author(s):  
A. Fernández ◽  
P. Prieto ◽  
C. Quirós ◽  
J. M. Sanz ◽  
J.‐M. Martin ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

scholarly journals Fullerenelike arrangements in carbon nitride thin films grown by direct ion beam sputtering

2005 ◽  
Vol 87 (7) ◽  
pp. 071901 ◽  
Author(s):  
R. Gago ◽  
G. Abrasonis ◽  
A. Mücklich ◽  
W. Möller ◽  
Zs. Czigány ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
Sign in / Sign up

Export Citation Format

Share Document