Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures

2002 ◽  
Vol 13 (2-4) ◽  
pp. 1111-1114 ◽  
Author(s):  
K Tsubaki ◽  
N Maeda ◽  
T Saitoh ◽  
T Nishida ◽  
N Kobayashi
Keyword(s):  
Gate Voltage ◽  
Voltage Dependence ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Subband Structure ◽  
Gate Voltage Dependence

Subband structure and transport properties of two-dimensional electron gas in AlxGa1–xN/GaN heterostructures

2007 ◽  
Vol 4 (7) ◽  
pp. 2334-2337
Author(s):  
Xiuxun Han ◽  
Yoshio Honda ◽  
Tetsuo Narita ◽  
Masahito Yamaguchi ◽  
Nobuhiko Sawaki
Keyword(s):  
Transport Properties ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Subband Structure

DEVIATION FROM EXACT CONDUCTANCE QUANTIZATION IN A SHORT CLEAN ONE-DIMENSIONAL CHANNEL

2003 ◽  
Vol 02 (06) ◽  
pp. 551-558
Author(s):  
C.-T. LIANG ◽  
O. A. TKACHENKO ◽  
V. A. TKACHENKO ◽  
D. G. BAKSHEYEV ◽  
M. Y. SIMMONS ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Analytical Estimate ◽  
One Dimensional ◽  
Conductance Quantization ◽  
Realistic Modeling ◽  
Dimensional Electron Gas

We have experimentally found that the height of quantized conductance steps of a short constriction in a two-dimensional electron gas can reduce by 3% as compared to 2e2/h. We explain this phenomenon by different shift of one-dimensional subbands in response to changing gate voltage. Both simple analytical estimate and realistic modeling of the device yield the same magnitude of the effect as that in experiment.

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