scholarly journals Resonant third harmonic generation of an infrared laser in a semiconductor wave guide

2010 ◽  
Vol 28 (2) ◽  
pp. 327-332 ◽  
Author(s):  
Vijay Garg ◽  
V.K. Tripathi

AbstractAn infrared laser propagating through a semiconductor waveguide, embedded with a density ripple of wave number q, resonantly excites third harmonic radiation. The phase matching is achieved when q equals difference between third harmonic wave number and three times the wave number of the laser. The excited third harmonic is in higher order radial Eigen mode than the pump laser. The third harmonic efficiency increases with electron concentration and decreases with the frequency of the laser.

Author(s):  
V.O. Gladyshev ◽  
P.P. Nikolaev ◽  
A.V. Skrabatun ◽  
E.A. Sharandin

In open publications the results of research on the third harmonic generation in the air by femtosecond laser radiation are presented. Most of the studies have been carried out using a titanium-sapphire laser with a central emission wavelength of 800 nm. This work presents for the first time the results of studies of the third harmonic generation in the air from laser radiation with a wavelength of 1032 nm. The source of the laser radiation was an ytterbium femtosecond laser which generated pulses with duration of ~ 250 fs and a repetition rate of 1 kHz. The average output power of the laser reached 1750 mW. Maximum peak intensity of excitation laser radiation was up to 10 TW/cm2. When focusing the laser radiation its filamentation took place and was accompanied by generation of the third harmonic radiation at wavelength of 344 nm. Spectral, energy and spatial characteristics of the generated third harmonic radiation were investigated. Energy measurements were carried out up to the threshold power of pump radiation at which the competing nonlinear processes in the circuit optical elements of the experimental setup began to occur. The maximum average third harmonic emission power was 1.52 mW with a third harmonic conversion efficiency of about 0.085 %. The far-field beam pattern had a symmetric Gaussian profile with a radiation divergence of 0.11 mrad which corresponds to the diffraction quality of the beam (M2 ≈ 1)


2016 ◽  
Vol 34 (1) ◽  
pp. 171-177 ◽  
Author(s):  
Shivani Vij ◽  
Niti Kant ◽  
Munish Aggarwal

AbstractA model is presented for the resonant third harmonic generation of short pulse lasers in cluster plasma in the presence of density ripple. Because of ripple in cluster density and plasma electron density outside the cluster, the phase-matching condition for the third harmonic process is satisfied, leading to resonant enhancement of harmonic generation. We explore the impact of laser intensity, cluster size, and collisional frequency of electrons on the efficiency of third harmonic generation. Moreover, since the group velocity of the third harmonic wave is greater than that of the fundamental wave, it causes the slippage of the generated harmonic pulse out of the fundamental laser pulse and its amplitude increases with time.


Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3194
Author(s):  
Adrian Petris ◽  
Petronela Gheorghe ◽  
Tudor Braniste ◽  
Ion Tiginyanu

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.


Author(s):  
D.V. Mokrousova ◽  
G.E. Rizaev ◽  
A.V. Shalova ◽  
D.E. Shipilo ◽  
N.A. Panov ◽  
...  

2013 ◽  
Vol 760-762 ◽  
pp. 392-396
Author(s):  
You Bin Yu

Third-harmonic generation in a special asymmetric quantum well is investigated. The third-harmonic generation coefficient is carried out by applying compact-density-matrix method. The numerical results are presented for a GaAs/AlGaAs asymmetric quantum well. The very large third-harmonic generation coefficient is obtained in this quantum well. Moreover, the third-harmonic generation coefficient dependents on the quantum well parameters are investigated, respectively.


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