HVEM and high resolution SEM of polyurethane bulk and surface structure

1988 ◽  
Vol 46 ◽  
pp. 936-937
Author(s):  
S. L. Goodman ◽  
C. Li ◽  
S. L. Cooper ◽  
R. M. Albrecht
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Soft Segment ◽  
Structure Property ◽  
Two Phase ◽  
Near Surface ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Soft Segments ◽  
Hard Segments

Segmented polyurethanes (PUs) are composed of alternating blocks of crystalline or glassy urethane “hard segments” and rubbery “soft segments.” Chemical incompatability between hard segment (HS) and soft segment (SS) blocks produces a two-phase structure, which accounts for the elastomeric properties of these polymer systems. Polyurethanes are prepared with different HS and SS components, and HS:SS ratios, for various applications. Knowledge of the 3D morphology is necessary to understand polyurethane structure-property relationships. Although conventional transmission electron microscopy can image some polyurethanes, high voltage electron microscopy (HVEM) causes less radiation damage and images thicker samples at higher resolution, thus a sample region may be imaged at multiple tilt angles to provide 3D information. High resolution scanning electron microscopy (HR-SEM) provides complementary information, and at low accelerating voltages (1-3 keV), images near surface structures.Polyurethanes were examined with hard segments of methylene diphenylene diisocyanate (MDI) and 2000 MW soft segments of polytetramethylene oxide (PTMO), polybutadiene (PBD) and polydimethysiloxane (PDMS).

mRNA localization by Electron microscopic in situ hybridization

1991 ◽  
Vol 49 ◽  
pp. 430-431
Author(s):  
J. A. Pollock ◽  
M. Martone ◽  
T. Deerinck ◽  
M. H. Ellisman
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Nucleic Acids ◽  
Recombinant Dna ◽  
Light And Electron Microscopy ◽  
Electron Microscopic ◽  
High Voltage Electron Microscopy ◽  
Functional Sites ◽  
Voltage Electron

Localization of specific proteins in cells by both light and electron microscopy has been facilitate by the availability of antibodies that recognize unique features of these proteins. High resolution localization studies conducted over the last 25 years have allowed biologists to study the synthesis, translocation and ultimate functional sites for many important classes of proteins. Recently, recombinant DNA techniques in molecular biology have allowed the production of specific probes for localization of nucleic acids by “in situ” hybridization. The availability of these probes potentially opens a new set of questions to experimental investigation regarding the subcellular distribution of specific DNA's and RNA's. Nucleic acids have a much lower “copy number” per cell than a typical protein, ranging from one copy to perhaps several thousand. Therefore, sensitive, high resolution techniques are required. There are several reasons why Intermediate Voltage Electron Microscopy (IVEM) and High Voltage Electron Microscopy (HVEM) are most useful for localization of nucleic acids in situ.

“High Resolution High Voltage Electron Microscopy”

1968 ◽  
Vol 26 ◽  
pp. 326-327
Author(s):  
Benjamin M. Siegel
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Voltage ◽  
Full Potential ◽  
Contrast Imaging ◽  
High Voltage Electron Microscopy ◽  
Low Contrast ◽  
Voltage Electron ◽  
Critical Areas ◽  
High Voltage Electron

The potential advantages of high voltage electron microscopy for extending the limits of resolution and contrast in imaging low contrast objects, such as biomolecular specimens, is very great. The results of computations will be presented showing that at accelerating voltages of 500-1000 kV it should be possible to achieve spacial resolutions of 1 to 1.5 Å and using phase contrast imaging achieve adequate image contrast to observe single atoms of low atomic number.The practical problems associated with the design and utilization of the high voltage instrument are, optimistically, within the range of competence of the state of the art. However, there are some extremely important and critical areas to be systematically investigated before we have achieved this competence. The basic electron optics of the column required is well understood, but before the full potential of an instrument capable of resolutions of better than 1.5 Å are realized some very careful development work will be required. Of great importance for the actual achievement of high resolution with a high voltage electron microscope is the fundamental limitation set by the characteristics of the high voltage electron beam that can be obtained from the accelerator column.

In Stlo High Resolution Electron Microscopy for Interface Studies

1986 ◽  
Vol 82 ◽  
Author(s):  
M. A. Parker ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Solid Phase ◽  
High Resolution Electron Microscopy ◽  
Kinetic Measurements ◽  
High Voltage Electron Microscopy ◽  
Interface Reactions ◽  
Voltage Electron ◽  
Transmission Electron ◽  
Resolution Electron

In situ kinetic measurements on the rate of solid—phase epitaxial regrowth of silicon in a conventional transmission electron microscope are described. The data compare well with those established for the sane material by high voltage electron microscopy and by Rutherford backscattering spectroscopy. High—resolution imaging at the same time provides direct information on atomic mechanisms. It is anticipated that this will beccme a more highly developed procedure in due course, especially for studies of interface reactions.

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