Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

High Energy Ion Beam Mixing in Al2 O3

1983 ◽  
Vol 27 ◽  
Author(s):  
M. B. Lewis ◽  
C. J. Mchargue
Keyword(s):  
Elevated Temperatures ◽  
Ion Beam ◽  
High Energy ◽  
Binary Collision ◽  
Surface Layers ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Metal Atoms ◽  
Radiation Enhanced Diffusion

ABSTRACTThe ion beam mixing technique has been employed to mix metal atoms into the surface layers of Al2O3. Ion beams of Fe+ and Zr+ in the 1 to 4 MeV energy range were used to irradiate Al2O3 specimens on the surfaces of which films of chromium or zirconium had been evaporated. Some specimens were irradiated at elevated temperatures of 873 or 1173 K. Rutherford backscattering (RBS) and channeling methods were used to measure the metal atom depth profiles near the surface. Analyses of the backscattering data included binary collision calculations using the codes TRIM and MARLOWE. The significance and limitations of high energy (>1 MeV) beams for ion beam mixing experiments is discussed. Evidence was found for radiation enhanced diffusion and/or solubility of zirconium and chromium in Al2O3 at 873 K.

Ion beam mixing and interdiffusion in magnetite thin films

2016 ◽  
Author(s):  
M. Krupska ◽  
N-T. H. Kim Ngan ◽  
S. Sowa ◽  
Z. Tarnawski ◽  
L. Havela ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Mixing

Ion beam mixing in Al/Fe multilayered thin films

Vacuum ◽  
1988 ◽  
Vol 38 (11) ◽  
pp. 987-990 ◽  
Author(s):  
B Rauschenbach ◽  
R Küchler ◽  
M Posselt ◽  
R Dietsch
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Multilayered Thin Films

Pulsed Laser And Ion Beam Surface Modification of Sintered, Alpha-Sic

1985 ◽  
Vol 51 ◽  
Author(s):  
K. L. More ◽  
R. F. Davis ◽  
B. R. Appleton ◽  
D. Lowndes ◽  
P. Smith
Keyword(s):  
Electron Microscopy ◽  
Surface Modification ◽  
Laser Annealing ◽  
Ion Beam ◽  
Pulsed Laser ◽  
High Energy ◽  
Strength Increase ◽  
Ion Beam Mixing ◽  
Krf Excimer Laser ◽  
Surface Modification Techniques

ABSTRACTPulsed laser annealing and ion beam mixing have been used as surface modification techniques to enhance the physical properties of polycrystalline α-SiC. Thin Ni overlayers (20 nm - 100 nm) were evaporated onto the SiC surface. The specimens were subsequently irradiated with pulses of a ruby or krypton fluoride (KrF) excimer laser or bombarded with high energy Xe+ or Si+ ions. Both processes are non-equilibrium methods and each has been shown to induce unique microstructural changes at the SiC surface which are not attainable by conventional thermal treatments. Under particular (and optimum) processing conditions, these changes considerably increased the mechanical properties of the SiC; following laser irradiation, the fracture strength of the SiC was increased by as much as 50%, but after ion beam mixing, no strength increase was observed.High resolution cross-section transmission electron microscopy (X-TEM), scanning electron microscopy (SEM), and Rutherford backscattering techniques were used to characterize the extent of mixing between the Ni and the SiC as a result of the surface modification.

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