Characterization of Modulated Structure Through Structure Images and their Computer Simulation

1990 ◽  
Vol 48 (1) ◽  
pp. 70-71
Author(s):  
Kiyomichi Nakai ◽  
Yusuke Isobe ◽  
Chiken Kinoshita ◽  
Kazutoshi Shinohara
Keyword(s):  
Computer Simulation ◽  
High Resolution ◽  
Spherical Aberration ◽  
High Resolution Electron Microscopy ◽  
Basic Mechanism ◽  
Objective Lens ◽  
Specimen Thickness ◽  
Transmitted Beam ◽  
Modulated Structure ◽  
Resolution Electron

Induced spinodal decomposition under electron irradiation in a Ni-Au alloy has been investigated with respect to its basic mechanism and confirmed to be caused by the relaxation of coherent strain associated with modulated structure. Modulation of white-dots on structure images of modulated structure due to high-resolution electron microscopy is reduced with irradiation. In this paper the atom arrangement of the modulated structure is confirmed with computer simulation on the structure images, and the relaxation of the coherent strain is concluded to be due to the reduction of phase-modulation.Structure images of three-dimensional modulated structure along <100> were taken with the JEM-4000EX high-resolution electron microscope at the HVEM Laboratory, Kyushu University. The transmitted beam and four 200 reflections with their satellites from the modulated structure in an fee Ni-30.0at%Au alloy under illumination of 400keV electrons were used for the structure images under a condition of the spherical aberration constant of the objective lens, Cs = 1mm, the divergence of the beam, α = 3 × 10-4 rad, underfocus, Δf ≃ -50nm and specimen thickness, t ≃ 15nm. The CIHRTEM code was used for the simulation of the structure image.

Computer Experiments for High Resolution Electron Microscopy at 100 and 500 kV

1977 ◽  
Vol 35 ◽  
pp. 74-75
Author(s):  
William Krakow
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Spherical Aberration ◽  
Computer Experiments ◽  
High Resolution Electron Microscopy ◽  
Computer Programs ◽  
Optical Diffraction ◽  
Objective Lens ◽  
Bright Field ◽  
Resolution Electron

A system of computer programs has been written to simulate both bright-field and dark-field micrographs of a variety of materials of interest in both metallurgical and biomolecular applications of high resolution electron microscopy. Selected area diffraction has also been incorporated into this system of programs as well as the ability to orient the object of interest relative to the microscope coordinate system by specifying the Eulers angles between the microscope and object coordinate systems. For bright-field imaging both elastic and inelastic scattering can be included for the tilted beam or axial imaging modes. Optical diffraction programs yield the power spectra of these micrographs and filtering programs have also been designed for high pass filtering and correction of the microscope transfer function. Some of the variables which are input into this system of computer programs are: objective lens defocus, spherical aberration, chromatic aberration, beam tilt, objective aperture size and electron wave length.

Voltage-center COMA-free alignment for high-resolution Electron Microscopy

1994 ◽  
Vol 52 ◽  
pp. 410-411
Author(s):  
K. Ishizuka ◽  
K. Shirota
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Incident Beam ◽  
Chromatic Aberration ◽  
High Resolution Electron Microscopy ◽  
Beam Deflection ◽  
Objective Lens ◽  
Main Magnetic Field ◽  
Beam Direction ◽  
Resolution Electron

In a conventional alignment for high-resolution electron microscopy, the specimen point imaged at the viewing-screen center is made dispersion-free against a voltage fluctuation by adjusting the incident beam direction using the beam deflector. For high-resolution works the voltage-center alignment is important, since this alignment reduces the chromatic aberration. On the other hand, the coma-free alignment is also indispensable for high-resolution electron microscopy. This is because even a small misalignment of the incident beam direction induces wave aberrations and affects the appearance of high resolution electron micrographs. Some alignment procedures which cancel out the coma by changing the incident beam direction have been proposed. Most recently, the effect of a three-fold astigmatism on the coma-free alignment has been revealed, and new algorithms of coma-free alignment have been proposed.However, the voltage-center and the coma-free alignments as well as the current-center alignment in general do not coincide to each other because of beam deflection due to a leakage field within the objective lens, even if the main magnetic-field of the objective lens is rotationally symmetric. Since all the proposed procedures for the coma-free alignment also use the same beam deflector above the objective lens that is used for the voltage-center alignment, the coma-free alignment is only attained at the sacrifice of the voltage-center alignment.

The Contribution of Phonon-Scattered Electrons to High-Resolution Electron Micrographs of Crystals

1990 ◽  
Vol 48 (1) ◽  
pp. 62-63
Author(s):  
H. Kohl
Keyword(s):  
High Resolution ◽  
Spherical Aberration ◽  
High Resolution Electron Microscopy ◽  
Static Potential ◽  
Qualitative Comparison ◽  
The Past ◽  
Resolution Electron ◽  
High Resolution Images ◽  
High Resolution Electron Micrographs ◽  
Extract Information

High-Resolution Electron Microscopy is able to determine structures of crystals and interfaces with a spatial resolution of somewhat less than 2 Å. As the image is strongly dependent on instrumental parameters, notably the defocus and the spherical aberration, the interpretation of micrographs necessitates a comparison with calculated images. Whereas one has often been content with a qualitative comparison of theory with experiment in the past, one is currently striving for quantitative procedures to extract information from the images [1,2]. For the calculations one starts by assuming a static potential, thus neglecting inelastic scattering processes.We shall confine the discussion to periodic specimens. All electrons, which have only been elastically scattered, are confined to very few directions, the Bragg spots. In-elastically scattered electrons, however, can be found in any direction. Therefore the influence of inelastic processes on the elastically (= Bragg) scattered electrons can be described as an attenuation [3]. For the calculation of high-resolution images this procedure would be correct only if we had an imaging energy filter capable of removing all phonon-scattered electrons. This is not realizable in practice. We are therefore forced to include the contribution of the phonon-scattered electrons.

High Resolution Electron Microscopy of Intergrowth and Modulated Structure in 110 K High-TcSuperconductor Bi2(Sr, Ca)4Cu3Oy

1988 ◽  
Vol 27 (Part 2, No. 7) ◽  
pp. L1241-L1244 ◽  
Author(s):  
Yoshio Matsui ◽  
Shunji Takekawa ◽  
Hiroshi Nozaki ◽  
Akihiro Umezono ◽  
Eiji Takayama-Muromachi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Modulated Structure ◽  
Resolution Electron

scholarly journals Vitrification of Y zeolite and its effects on HREM images

1986 ◽  
Vol 44 ◽  
pp. 774-775
Author(s):  
R. Csencsits
Keyword(s):  
Electron Microscopy ◽  
Computer Simulation ◽  
Electron Microscope ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Systematic Investigation ◽  
Y Zeolite ◽  
Y Zeolites ◽  
Transmission Electron ◽  
Resolution Electron

High resolution electron microscopy (HREM) is a valuable technique for studying catalytic zeolite systems because it gives direct information about the structure and defects present in the structure. The difficulty with doing an HREM study on zeolites is that they become amorphous under electron irradiation. This work is a systematic investigation of the damage of Y zeolites in the transmission electron microscope (TEM); the goals of this study are to determine the mechanism for electron damage and to access the effects of damage in Y zeolites on their HREM images using computer simulation.

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