Focused Ion Beam Sectioning and Lift-out Method for Copper and Resist Vias in Organic Low-k Dielectrics

2002 ◽  
Vol 8 (6) ◽  
pp. 502-508 ◽  
Author(s):  
E.J. Crawford ◽  
L. Gignac ◽  
K. Barth ◽  
J. Petrus ◽  
E. Levine
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Sem Analysis ◽  
Ex Situ ◽  
Ion Milling ◽  
Transmission Electron ◽  
Low K

The focused ion beam lift-out technique for scanning electron microscope (SEM) and transmission electron microscope (TEM) sample preparation was shown to be applicable to copper/low-k dielectric semiconductor technology. High resolution SEM, TEM, and scanning transmission electron microscope analyses were performed on metal contacts and resist vias with no evidence of the interface damage or metal smearing commonly observed with mechanical polishing. Ion milling of the sample ex situ to the substrate provided decoration and adjustment of the exposed plane of the section when necessary for SEM analysis.

Evaluation of annular pupil for scanning transmission electron microscope formed by focused ion beam technique

Vacuum ◽  
2008 ◽  
Vol 83 (1) ◽  
pp. 201-204 ◽  
Author(s):  
Takaomi Matsutani ◽  
Masaki Taya ◽  
Takashi Ikuta ◽  
Tetsuya Fujimura ◽  
Hirohiko Inui ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Beam Technique

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

scholarly journals An Analysis of Li Ion Secondary Battery Materials by Using Focused Ion Beam Micro-sampling Technique and Cold Field Emission Scanning Transmission Electron Microscope

2010 ◽  
Vol 16 (S2) ◽  
pp. 214-215
Author(s):  
T Tanigaki ◽  
K Ito ◽  
K Nakamura ◽  
Y Nagakubo ◽  
J Azuma ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Battery Materials ◽  
Secondary Battery ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Li Ion

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Transmission Electron Microscope Specimen Preparation of Metal Matrix Composites Using the Focused Ion Beam Miller

2000 ◽  
Vol 6 (5) ◽  
pp. 452-462 ◽  
Author(s):  
Julie M. Cairney ◽  
Robert D. Smith ◽  
Paul R. Munroe
Keyword(s):  
Electron Microscope ◽  
Metal Matrix Composites ◽  
Transmission Electron Microscope ◽  
Metal Matrix ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Matrix Composites ◽  
Transmission Electron ◽  
The Matrix ◽  
Ceramic Reinforcement

AbstractTransmission electron microscope samples of two types of metal matrix composites were prepared using both traditional thinning methods and the more novel focused ion beam miller. Electropolishing methods were able to produce, very rapidly, thin foils where the matrix was electron transparent, but the ceramic reinforcement particles remained unthinned. Thus, it was not possible in these foils to study either the matrix-reinforcement interface or the microstructure of the reinforcement particles themselves. In contrast, both phases in the composites prepared using the focused ion beam miller thinned uniformly. The interfaces in these materials were clearly visible and the ceramic reinforcement was electron transparent. However, microstructural artifacts associated with ion beam damage were also observed. The extent of these artifacts and methods of minimizing their effect were dependent on both the materials and the milling conditions used.

Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

2011 ◽  
Vol 17 (6) ◽  
pp. 889-895 ◽  
Author(s):  
Lynne M. Gignac ◽  
Surbhi Mittal ◽  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Jeffrey W. Sleight
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Nanowire ◽  
Dual Beam ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

The Effect of Focused Ion Beam (Fib) Specimen Geometry on X-Ray Fluorescence During Energy Dispersive X-Ray Spectroscopy (EDS) Analysis in the Transmission Electron Microscope (TEM)

1998 ◽  
Vol 4 (S2) ◽  
pp. 856-857
Author(s):  
David M. Longo ◽  
James M. Howe ◽  
William C. Johnson
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Materials Science ◽  
Bulk Material ◽  
Ion Beam ◽  
Energy Dispersive ◽  
Specimen Preparation ◽  
X Ray ◽  
Transmission Electron

The focused ion beam (FIB) has become an indispensable tool for a variety of applications in materials science, including that of specimen preparation for the transmission electron microscope (TEM). Several FIB specimen preparation techniques have been developed, but some problems result when FIB specimens are analyzed in the TEM. One of these is X-ray fluorescence from bulk material surrounding the thin membrane in FIB-prepared samples. This paper reports on a new FIB specimen preparation method which was devised for the reduction of X-ray fluorescence during energy dispersive X-ray spectroscopy (EDS) in the TEM.Figure 1 shows three membrane geometries that were investigated in this study on a single-crystal Si substrate with a RF sputter-deposited 50 nm Ni film. Membrane 1 is the most commonly reported geometry in the literature, with an approximately 20 urn wide trench and a membrane having a single wedge with a 1.5° incline.

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