Low-Pressure CVD of GeE (E = Te, Se, S) Thin Films from Alkylgermanium Chalcogenolate Precursors and Effect of Deposition Temperature on the Thermoelectric Performance of GeTe

2021 ◽  
Author(s):  
Fred Robinson ◽  
Vikesh Sethi ◽  
C. H. Kees de Groot ◽  
Andrew L. Hector ◽  
Ruomeng Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Low Pressure ◽  
Thermoelectric Performance

scholarly journals Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour deposition

2020 ◽  
Vol 848 ◽  
pp. 156523
Author(s):  
Daniel W. Newbrook ◽  
Stephen P. Richards ◽  
Victoria K. Greenacre ◽  
Andrew L. Hector ◽  
William Levason ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Thermoelectric Performance ◽  
Pressure Chemical

Thermoelectric Performance of Ge-Doped Mg2Si0.35Sn0.65 Thin Films

2021 ◽  
Author(s):  
Mahsasadat Safavi ◽  
Nicolas Martin ◽  
Eric Aubry ◽  
Vincent Linseis ◽  
Alain Billard ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Performance

Surprisingly high in-plane thermoelectric performance in a-axis-oriented epitaxial SnSe thin films

2021 ◽  
Vol 18 ◽  
pp. 100399
Author(s):  
Shuaihang Hou ◽  
Zhiliang Li ◽  
Yuli Xue ◽  
Xinkun Ning ◽  
Jianglong Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Performance

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

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