Fabrication of Conductive Copper Films on Flexible Polymer Substrates by Low-Temperature Sintering of Composite Cu Ink in Air

2017 ◽  
Vol 9 (24) ◽  
pp. 20852-20858 ◽  
Author(s):  
Mai Kanzaki ◽  
Yuki Kawaguchi ◽  
Hideya Kawasaki
Author(s):  
Jurgen Keck ◽  
Birger Freisinger ◽  
Daniel Juric ◽  
Kerstin Glaser ◽  
Martin Volker ◽  
...  

2012 ◽  
Vol 1529 ◽  
Author(s):  
Siyuan Ma ◽  
Vadim Bromberg ◽  
Frank D. Egitto ◽  
Timothy J. Singler

ABSTRACTDeposition of solution-processed functional materials generally requires additional post-processing to optimize the functionality of the material. We study sintering of Ag nanoparticle (NP) (with average diameter 77nm) deposits for improved electrical conductivity, with emphasis on Argon plasma methods compatible with the low temperature requirements of regular low-cost flexible polymer substrates. The relationship between plasma parameters (such as power and treatment time) versus sintering results (sintered structure depth, film continuity and electrical sheet resistance) will be reported. According to our efforts so far, we have achieved the electrical resistivity of the sintered film at about 20 times greater than the value of bulk silver using a process compatible with the low temperature requirements of common flexible polymer substrates.


2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Yingqiong Yong ◽  
Mai Thanh Nguyen ◽  
Hiroki Tsukamoto ◽  
Masaki Matsubara ◽  
Ying-Chih Liao ◽  
...  

Author(s):  
Seung Hwan Ko ◽  
Inkyu Park ◽  
Heng Pan ◽  
Albert P. Pisano ◽  
Costas P. Grigoropoulos

The low temperature fabrication of OFET (organic field effect transistor) is presented in this paper. PDMS imprinting mold was used to pattern gold nano-particles suspended in Alpha-Terpineol solvent. After imprinting, nanoparticles was dried and then sintered at plastic compatible low temperature. Finally, air stable semiconductor polymer (modified polythiophene) in dichlorobenzene (o-DCB) solution to fabricate OFETs on flexible polymer substrates. The performance of the transistors were characterized and discussed.


2006 ◽  
Vol 16 (12) ◽  
pp. 747-753
Author(s):  
So-Hyun Jeon ◽  
In-Sung Kim ◽  
Sun-Jong Jung ◽  
Jae-Sung Song ◽  
Jon-Do Yoon

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