Effect of Growth Pressure on Graphene Direct Growth on an A-Plane Sapphire Substrate: Implications for Graphene-Based Electronic Devices

2020 ◽  
Author(s):  
Yuki Ueda ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Sapphire Substrate ◽  
Electronic Devices ◽  
Growth Pressure ◽  
Direct Growth

Effect of growth pressure on graphene direct growth on r-plane and c-plane sapphires by low-pressure CVD

2018 ◽  
Vol 58 (SA) ◽  
pp. SAAE04 ◽  
Author(s):  
Yuki Ueda ◽  
Jumpei Yamanda ◽  
Kyosuke Fujiwara ◽  
Daichi Yamamoto ◽  
Takahiro Maruyama ◽  
...  
Keyword(s):  
Low Pressure ◽  
Growth Pressure ◽  
Direct Growth

scholarly journals Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

2020 ◽  
Vol 10 (2) ◽  
pp. 639
Author(s):  
Minghui Gu ◽  
Chen Li ◽  
Yuanfeng Ding ◽  
Kedong Zhang ◽  
Shunji Xia ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Mobility ◽  
Two Dimensional ◽  
Large Area ◽  
High Quality ◽  
Direct Growth

Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.

Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

CrystEngComm ◽  
2019 ◽  
Vol 21 (34) ◽  
pp. 5124-5128 ◽  
Author(s):  
Shen Yan ◽  
Junhui Die ◽  
Caiwei Wang ◽  
Xiaotao Hu ◽  
Ziguang Ma ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Crystal Quality ◽  
High Quality ◽  
Patterned Sapphire Substrate ◽  
Direct Growth

In this work, high-quality a-plane GaN was obtained by direct growth on a stripe-patterned sapphire substrate.

Direct Growth ofa-Plane GaN onr-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (2) ◽  
pp. 555-559 ◽  
Author(s):  
Masahiro Araki ◽  
Noriaki Mochimizo ◽  
Katsuyuki Hoshino ◽  
Kazuyuki Tadatomo
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Direct Growth

Crystal orientation effects of sapphire substrate on graphene direct growth by metal catalyst-free low-pressure CVD

2019 ◽  
Vol 115 (1) ◽  
pp. 013103 ◽  
Author(s):  
Yuki Ueda ◽  
Jumpei Yamada ◽  
Taishi Ono ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Sapphire Substrate ◽  
Crystal Orientation ◽  
Low Pressure ◽  
Metal Catalyst ◽  
Catalyst Free ◽  
Orientation Effects ◽  
Direct Growth

Direct growth ofa-plane GaN onr-plane sapphire substrate by metalorganic vapor phase epitaxy

2007 ◽  
Vol 4 (7) ◽  
pp. 2540-2543 ◽  
Author(s):  
Masahiro Araki ◽  
Katsuyuki Hoshino ◽  
Kazuyuki Tadatomo
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Direct Growth

scholarly journals EFFECT OF AlN LAYERS ON THE AlxGa1-xN/GaN GROWN ON SAPPHIRE SUBSTRATES

2019 ◽  
Author(s):  
Kheam Bun
Keyword(s):  
Surface Roughness ◽  
Sapphire Substrate ◽  
Electronic Devices ◽  
Lower Surface ◽  
Experimental Results ◽  
Power Electronic ◽  
Electrical Characteristics ◽  
Sapphire Substrates ◽  
Gan Heterostructure

The effect of a thin AlN layer inserted between AlxGa1-xN/GaN heterostructures grown on sapphire substrates was investigated for possible application in opto-electronic and power electronic devices. The heterostructures with two different Al compositions (0.35 and 0.49) were applied to study. After growing a thin AlN interlayer (~10nm) on the buffer GaN/AlN/sapphire substrate, then a thick AlxGa1-xN/GaN heterostructure were grown and investigated the Al mole fractions. Low rocking curves were also achieved with 0.35 and 0.48 for the 0.3 and 0.49 Al compositions, respectively. The experimental results show that with an increasing of Al composition, the crystallinity is also improved with lower surface roughness. The AlxGa1-xN/GaN heterostructures with 0.35 and 0.49 Al compositions were also investigated the electrical characteristics to confirm that they are suitable for development in optoelectronic and power electronic devices.

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