Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO2 Thin Films on Silicon

2014 ◽  
Vol 6 (20) ◽  
pp. 17496-17505 ◽  
Author(s):  
Gang Niu ◽  
Erwin Hildebrandt ◽  
Markus Andreas Schubert ◽  
Federico Boscherini ◽  
Marvin Hartwig Zoellner ◽  
...  
2021 ◽  
Vol 527 ◽  
pp. 167775
Author(s):  
Xiaodong Zhou ◽  
Erlei Wang ◽  
Xiaodong Lao ◽  
Yongmei Wang ◽  
Honglei Yuan

2017 ◽  
Vol 43 (1) ◽  
pp. 399-406 ◽  
Author(s):  
R. Murugan ◽  
G. Vijayaprasath ◽  
M. Thangaraj ◽  
T. Mahalingam ◽  
S. Rajendran ◽  
...  

2015 ◽  
Vol 117 (21) ◽  
pp. 214310 ◽  
Author(s):  
A. Simimol ◽  
Aji A. Anappara ◽  
S. Greulich-Weber ◽  
Prasanta Chowdhury ◽  
Harish C. Barshilia

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xiao Zhang ◽  
Wei Zhang ◽  
Xinghua Zhang ◽  
Xuewen Xu ◽  
Fanbin Meng ◽  
...  

Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures. Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism. XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples. Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an alteration of electronic configuration.


2009 ◽  
Vol 94 (4) ◽  
pp. 042508 ◽  
Author(s):  
Wensheng Yan ◽  
Zhihu Sun ◽  
Zhiyun Pan ◽  
Qinghua Liu ◽  
Tao Yao ◽  
...  

2010 ◽  
Vol 519 (1) ◽  
pp. 410-413 ◽  
Author(s):  
S.K. Sharma ◽  
P. Thakur ◽  
Shalendra Kumar ◽  
D.K. Shukla ◽  
N.B. Brookes ◽  
...  

2007 ◽  
Vol 364 (3-4) ◽  
pp. 318-322 ◽  
Author(s):  
D.L. Hou ◽  
H.J. Meng ◽  
L.Y. Jia ◽  
X.J. Ye ◽  
H.J. Zhou ◽  
...  

2017 ◽  
Vol 92 (5) ◽  
pp. 619-628 ◽  
Author(s):  
Deepannita Chakraborty ◽  
S. Kaleemulla ◽  
M. Kuppan ◽  
N. Madhusudhana Rao ◽  
C. Krishnamoorthi ◽  
...  

2021 ◽  
pp. 413158
Author(s):  
Kenji Tarui ◽  
Tomohiro Oomori ◽  
Yuya Ito ◽  
Tomoyuki Yamamoto

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